APM4500
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
2.0
0.20
-ID=4.3A
-VGS=4.5V
-ID=4.3A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
-50 -25
0
25 50 75 100 125 150
1
2
3
4
5
6
7
8
-VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Gate Charge
Capacitance
800
700
600
500
400
300
200
100
5
4
3
2
1
0
-VDS=10V
-ID=3A
Frequency=1MHz
Ciss
Coss
Crss
0
2
4
6
8
10
0
5
10
15
20
QG - Gate Charge (nC)
-VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp.
8
www.anpec.com.tw
Rev. A.2 - May., 2003