APM4500
Typical Characteristics
N-Channel MOSFET
Output Characteristics
Transfer Characteristics
20
20
16
12
8
VGS=3,4,5,6,7,8,9,10V
VGS=2.5V
16
12
8
VGS=2V
TJ=125°C
TJ=-55°C
4
4
TJ=25°C
VGS=1.5V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
6
7
8
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
On-Resistance vs. Drain Current
1.50
0.06
0.05
0.04
0.03
0.02
0.01
0.00
IDS=250µA
1.25
1.00
0.75
0.50
0.25
0.00
VGS=2.5V
VGS=4.5V
-50 -25
0
25 50 75 100 125 150
0
2
4
6
8
10
Tj - Junction Temperature (°C)
ID - Drain Current (A)
Copyright ANPEC Electronics Corp.
Rev. A.2 - May., 2003
4
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