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AMS73CAG01408RAUJH7 参数 Datasheet PDF下载

AMS73CAG01408RAUJH7图片预览
型号: AMS73CAG01408RAUJH7
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能的1Gbit DDR3 SDRAM [HIGH PERFORMANCE 1Gbit DDR3 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 31 页 / 683 K
品牌: AMS [ Advanced Monolithic Systems Ltd ]
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AMS73CAG01808RA  
Allowed time before ringback (tDVAC) for CK - CK and DQS - DQS  
tDVAC [ps] @ |VIH/Ldiff(AC)| = 350mV  
tDVAC [ps] @ |VIH/Ldiff(AC)| = 300mV  
Slew Rate [V/ns]  
Min.  
75  
57  
50  
38  
34  
29  
22  
13  
0
Max.  
Min.  
175  
170  
167  
163  
162  
161  
159  
155  
150  
150  
Max.  
> 4.0  
4.0  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3.0  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
< 1.0  
0
Single-ended requirements for differential signals  
Each individual component of a differential signal (CK, DQS, CK, DQS) has also to comply with certain  
requirements for single-ended signals.  
CK and CK have to approximately reach VSEH min / VSEL max [ approximately equal to the AC-levels  
( VIH(AC) / VIL(AC) ) for Address/command signals ] in every half-cycle.  
DQS, DQS have to reach VSEH min / VSEL max [ approximately the ac-levels ( VIH(AC) / VIL(AC) ) for DQ  
signals ] in every half-cycle proceeding and following a valid transition.  
Note that the applicable AC-levels for Address/command and DQ’s might be different per speed-bin etc.  
E.g. if VIH150(AC) / VIL150(AC) is used for Address/command signals, then these AC-levels apply also for  
the single-ended components of differential CK and CK.  
AMS73CAG01808RA Rev. 1.0 December 2010  
17