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A67P06361 参数 Datasheet PDF下载

A67P06361图片预览
型号: A67P06361
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×18 , 1M ×36 LVTTL ,流通型ZeBL SRAM [2M X 18, 1M X 36 LVTTL, Flow-through ZeBL SRAM]
分类和应用: 静态存储器
文件页数/大小: 18 页 / 243 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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A67P16181/A67P06361 Series  
Preliminary  
2M X 18, 1M X 36 LVTTL, Flow-through ZeBLTM SRAM  
Features  
Fast access time: 6.5/7.5/8.5 ns  
Clock-controlled and registered address, data and  
(153, 133, 117 MHz)  
control signals  
Zero Bus Latency between READ and WRITE cycles  
allows 100% bus utilization  
Signal +2.5V ± 5% power supply  
Individual Byte Write control capability  
Registered output for pipelined applications  
Three separate chip enables allow wide range of options  
for CE control, address pipelining  
Internally self-timed write cycle  
Selectable BURST mode (Linear or Interleaved)  
SLEEP mode (ZZ pin) provided  
Available in 100 pin LQFP package  
Clock enable (  
) pin to enable clock and suspend  
CEN  
operations  
General Description  
The AMIC Zero Bus Latency (ZeBLTM) SRAM family  
employs high-speed, low-power CMOS designs using an  
advanced CMOS process.  
The A67P16181, A67P06361 SRAMs integrate a 2M X 18,  
1M X 36 SRAM core with advanced synchronous peripheral  
circuitry and a 2-bit burst counter. These SRAMs are  
optimized for 100 percent bus utilization without the  
insertion of any wait cycles during Write-Read alternation.  
The positive edge triggered single clock input (CLK)  
controls all synchronous inputs passing through the  
registers. The synchronous inputs include all address, all  
generated by the chip and controlled by the same input pin  
ADV/  
in High state.  
LD  
Write cycles are internally self-time and synchronous with  
the rising edge of the clock input and when R/ is Low.  
W
The feature simplified the write interface. Individual Byte  
enables allow individual bytes to be written. controls  
BW1  
controls I/Oc pins;  
I/Oa pins;  
controls I/Ob pins;  
BW3  
BW2  
and  
controls I/Od pins. Cycle types can only be  
BW4  
defined when an address is loaded.  
The SRAM operates from a +2.5V power supply, and all  
inputs and outputs are LVTTL-compatible. The device is  
ideally suited for high bandwidth utilization systems.  
data inputs, active low chip enable (  
), two additional chip  
CE  
enables for easy depth expansion (CE2,  
), cycle start  
CE2  
input (ADV/  
), synchronous clock enable (  
), byte  
LD  
CEN  
write enables (  
,
,
,
BW4  
BW3  
) and read/write  
BW1 BW2  
(R/ ).  
W
Asynchronous inputs include the output enable (  
), clock  
OE  
(CLK), SLEEP mode (ZZ, tied LOW if unused) and burst  
mode (MODE). Burst Mode can provide either interleaved  
or linear operation, burst operation can be initiated by  
synchronous address Advance/Load (ADV/  
) pin in Low  
LD  
state. Subsequent burst address can be internally  
PRELIMINARY (August, 2004, Version 0.1)  
2
AMIC Technology, Corp.  
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