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A25GBQ4080QL 参数 Datasheet PDF下载

A25GBQ4080QL图片预览
型号: A25GBQ4080QL
PDF下载: 下载PDF文件 查看货源
内容描述: [8Mbit, 3V Suspend/Resume, Dual/Quad-I/O Serial Flash Memory]
分类和应用:
文件页数/大小: 58 页 / 922 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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A25LQ080 Series  
Block Erase (BE)  
The Block Erase (BE) instruction sets to 1 (FFh) all bits inside  
the chosen block. Before it can be accepted, a Write Enable  
(WREN) instruction must previously have been executed.  
After the Write Enable (WREN) instruction has been decoded,  
the device sets the Write Enable Latch (WEL).  
S
instruction is not executed. As soon as Chip Select ( ) is  
driven High, the self-timed Block Erase cycle (whose duration  
is tBE) is initiated. While the Block Erase cycle is in progress,  
the Status Register may be read to check the value of the  
Write In Progress (WIP) bit. The Write In Progress (WIP) bit  
is 1 during the self-timed Block Erase cycle, and is 0 when it  
is completed. At some unspecified time before the cycle is  
completed, the Write Enable Latch (WEL) bit is reset.  
A Block Erase (BE) instruction applied to a page which is  
protected by the Block Protect (CMP, SEC, TB, BP2, BP1,  
BP0) bits (see table 1) is not executed.  
The Block Erase (BE) instruction is entered by driving Chip  
S
Select ( ) Low, followed by the instruction code on Serial  
S
Data Input (DI). Chip Select ( ) must be driven Low for the  
entire duration of the sequence.  
The instruction sequence is shown in Figure 20. Chip Select  
S
(
) must be driven High after the eighth bit of the instruction  
code has been latched in, otherwise the Block Erase  
Figure 20. Block Erase (BE) Instruction Sequence  
S
6
0
1
2
3
4
5
7
8
9 10  
28 29 30 31  
C
24-Bit Address  
Instruction (D8h or 52h)  
22  
3
23  
21  
2
1
0
DI  
MSB  
Note: Address bits A23 to A20 are Don’t Care, for A25LQ080.  
(April, 2016, Version 1.0)  
30  
AMIC Technology Corp.  
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