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M42000002V 参数 Datasheet PDF下载

M42000002V图片预览
型号: M42000002V
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位(8M ×8位/ 4米x 16位) CMOS 3.0伏只,同时操作闪存和4兆位( 256千×16位),静态RAM [64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM]
分类和应用: 闪存
文件页数/大小: 61 页 / 1027 K
品牌: AMD [ AMD ]
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P R E L I M I N A R Y  
REVISION SUMMARY  
Revision A (October 24, 2001)  
Revision A+1 (March 20, 2002)  
Initial release.  
SRAM DC and Operating Characteristics  
Changed maximum specifications for ICCs and ISB1  
Added VIL and VIH and corresponding notes to table.  
.
Figure 30, SRAM Write CycleWE# Control  
Corrected tBW in data out waveform to tWHZ  
.
Trademarks  
Copyright © 2002 Advanced Micro Devices, Inc. All rights reserved.  
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.  
ExpressFlash is a trademark of Advanced Micro Devices, Inc.  
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.  
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Am42DL6404G  
March 20, 2002