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M42000002V 参数 Datasheet PDF下载

M42000002V图片预览
型号: M42000002V
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位(8M ×8位/ 4米x 16位) CMOS 3.0伏只,同时操作闪存和4兆位( 256千×16位),静态RAM [64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM]
分类和应用: 闪存
文件页数/大小: 61 页 / 1027 K
品牌: AMD [ AMD ]
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P R E L I M I N A R Y  
SRAM CHARACTERISTICS  
Write Cycle  
Speed  
Parameter  
Description  
Symbol  
Unit  
70  
70  
60  
85  
85  
70  
tWC  
tCw  
tAS  
Write Cycle Time  
Min  
Min  
Min  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Chip Enable to End of Write  
Address Setup Time  
0
tAW  
tBW  
tWP  
tWR  
Address Valid to End of Write  
UB#s, LB#s to End of Write  
Write Pulse Time  
Min  
Min  
Min  
Min  
Min  
Max  
Min  
Min  
Min  
60  
60  
50  
70  
70  
60  
Write Recovery Time  
0
0
tWHZ  
Write to Output High-Z  
ns  
20  
30  
25  
35  
tDW  
tDH  
tOW  
Data to Write Time Overlap  
Data Hold from Write Time  
End Write to Output Low-Z  
ns  
ns  
ns  
0
5
tWC  
Address  
CS1#s  
tCW  
(See Note 2)  
tWR (See Note 3)  
tAW  
CS2s  
tCW  
(See Note 2)  
tBW  
UB#s, LB#s  
tWP  
(See Note 5)  
WE#  
tAS  
(See Note 4)  
tDH  
tDW  
(See Note 9)  
(See Note 6)  
(See Note 9)  
High-Z  
Data In  
High-Z  
Data Valid  
tWHZ  
tOW  
Data Out  
(See Note 7)  
Notes:  
1. WE# controlled.  
2. tCW is measured from CE1#s going low to the end of write.  
3. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high.  
4. tAS is measured from the address valid to the beginning of write.  
5. A write occurs during the overlap (tWP) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when  
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A  
write ends at the earliest transition when CE1#s goes high and WE# goes high. The tWP is measured from the beginning of write  
to the end of write.  
6. If CE1# goes low (or CE2 goes high) at the same time or after WE# goes low, the outputs will remain at high impedance.  
7. If CE1# goes high (or CE2 goes low) at the same time or before WE# goes high, the outputs will remain at high impedance.  
8. If OE# is high during the write cycle, the outputs will remain at high impedance.  
9. Output data may be present on the bus at this time; input signals should not be applied.  
Figure 30. SRAM Write CycleWE# Control  
54  
Am42DL6404G  
March 20, 2002