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M41000002T 参数 Datasheet PDF下载

M41000002T图片预览
型号: M41000002T
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位( 4米×8位/ 2的M× 16位) CMOS 3.0伏只,同步读/写闪存和8兆位( 1一M× 8位/ 512的K× 16位)静态RAM [32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM]
分类和应用: 闪存
文件页数/大小: 66 页 / 1128 K
品牌: AMD [ AMD ]
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P R E L I M I N A R Y  
ful. However, a succeeding read will show that the  
Enter SecSi Sector/Exit SecSi Sector  
Command Sequence  
data is still 0.Only erase operations can convert a  
0to a 1.”  
The system can access the SecSi Sector region by is-  
suing the three-cycle Enter SecSi Sector command  
sequence. The device continues to access the SecSi  
Sector region until the system issues the four-cycle  
Exit SecSi Sector command sequence. The Exit SecSi  
Sector command sequence returns the device to nor-  
mal operation. Tables 16 and 18 show the address  
and data requirements for both command sequences.  
See also SecSi (Secured Silicon) Sector Flash Mem-  
ory Regionfor further information. Note that a  
hardware reset (RESET#=VIL) will reset the device to  
reading array data.  
Unlock Bypass Command Sequence  
The unlock bypass feature allows the system to pro-  
gram bytes or words to a bank faster than using the  
standard program command sequence. The unlock  
bypass command sequence is initiated by first writing  
two unlock cycles. This is followed by a third write  
cycle containing the unlock bypass command, 20h.  
That bank then enters the unlock bypass mode. A  
two-cycle unlock bypass program command sequence  
is all that is required to program in this mode. The first  
cycle in this sequence contains the unlock bypass pro-  
gram command, A0h; the second cycle contains the  
program address and data. Additional data is pro-  
grammed in the same manner. This mode dispenses  
with the initial two unlock cycles required in the stan-  
dard program command sequence, resulting in faster  
total programming time. Tables 16 and 18 show the re-  
quirements for the command sequence.  
Byte/Word Program Command Sequence  
The system may program the device by word or byte,  
depending on the state of the CIOf pin. Programming  
is a four-bus-cycle operation. The program command  
sequence is initiated by writing two unlock write cy-  
cles, followed by the program set-up command. The  
program address and data are written next, which in  
turn initiate the Embedded Program algorithm. The  
system is not required to provide further controls or  
timings. The device automatically provides internally  
generated program pulses and verifies the pro-  
grammed cell margin. Tables 16 and 18 show the  
address and data requirements for the byte program  
command sequence.  
During the unlock bypass mode, only the Unlock By-  
pass Program and Unlock Bypass Reset commands  
are valid. To exit the unlock bypass mode, the system  
must issue the two-cycle unlock bypass reset com-  
mand sequence. The first cycle must contain the bank  
address and the data 90h. The second cycle need  
only contain the data 00h. The bank then returns to  
the reading array data.  
When the Embedded Program algorithm is complete,  
that bank then returns to reading array data and ad-  
dresses are no longer latched. The system can  
determine the status of the program operation by  
using DQ7, DQ6, or RY/BY#. Refer to the Write Oper-  
ation Status section for information on these status  
bits.  
The device offers accelerated program operations  
through the WP#/ACC pin. When the system asserts  
V
HH on the WP#/ACC pin, the device automatically en-  
ters the Unlock Bypass mode. The system may then  
write the two-cycle Unlock Bypass program command  
sequence. The device uses the higher voltage on the  
WP#/ACC pin to accelerate the operation. Note that  
the WP#/ACC pin must not be at VHH any operation  
other than accelerated programming, or device dam-  
age may result. In addition, the WP#/ACC pin must not  
be left floating or unconnected; inconsistent behavior  
of the device may result.  
Any commands written to the device during the Em-  
bedded Program Algorithm are ignored. Note that a  
hardware reset immediately terminates the program  
operation. The program command sequence should  
be reinitiated once that bank has returned to reading  
array data, to ensure data integrity.  
Figure 3 illustrates the algorithm for the program oper-  
ation. Refer to the Flash Erase and Program  
Operations table in the AC Characteristics section for  
parameters, and Figure 18 for timing diagrams.  
Programming is allowed in any sequence and across  
sector boundaries. A bit cannot be programmed  
from 0back to a 1.Attempting to do so may  
cause that bank to set DQ5 = 1, or cause the DQ7 and  
DQ6 status bits to indicate the operation was success-  
September 5, 2002  
Am41DL32x8G  
29  
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