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AM29DL800BT70WBI 参数 Datasheet PDF下载

AM29DL800BT70WBI图片预览
型号: AM29DL800BT70WBI
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 1一M× 8位/ 512的K× 16位) CMOS 3.0伏只,同时操作闪存 [8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory]
分类和应用: 闪存
文件页数/大小: 43 页 / 545 K
品牌: AMD [ AMD ]
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P R E L I M I N A R Y  
DEVICE BUS OPERATIONS  
This section describes the requirements and use of the  
device bus operations, which are initiated through the  
internal command register. The command register it-  
self does not occupy any addressable memory loca-  
tion. The register is a latch used to store the  
commands, along with the address and data informa-  
tion needed to execute the command. The contents of  
the register serve as inputs to the internal state ma-  
chine. The state machine outputs dictate the function of  
the device. Table 1 lists the device bus operations, the  
inputs and control levels they require, and the resulting  
output. The following subsections describe each of  
these operations in further detail.  
Table 1. Am29DL800B Device Bus Operations  
DQ8–DQ15  
BYTE#  
= V  
Addresses  
(Note 1)  
DQ0– BYTE#  
Operation  
CE# OE# WE# RESET#  
DQ7  
= V  
IH  
IL  
Read  
L
L
H
H
A
D
D
DQ8–DQ14 = High-Z,  
DQ15 = A-1  
IN  
OUT  
OUT  
Write  
L
H
L
H
A
D
D
IN  
IN  
IN  
V
0.3 V  
±
V
0.3 V  
±
CC  
CC  
Standby  
X
X
X
High-Z High-Z  
High-Z  
Output Disable  
Reset  
L
H
X
H
X
H
L
X
X
High-Z High-Z  
High-Z High-Z  
High-Z  
High-Z  
X
Sector Address,  
A6 = L, A1 = H,  
A0 = L  
Sector Protect (Note 2)  
L
H
L
V
D
X
X
X
ID  
IN  
Sector Address,  
A6 = H, A1 = H,  
A0 = L  
Sector Unprotect (Note 2)  
L
H
X
L
V
V
D
D
X
ID  
ID  
IN  
IN  
Temporary Sector Unprotect  
X
X
A
D
High-Z  
IN  
IN  
Legend:  
L = Logic Low = V , H = Logic High = V , V = 12.0 ± 0.5 V, X = Don’t Care, A = Address In, D = Data In, D = Data Out  
IL  
IH  
ID  
IN  
IN  
OUT  
Notes:  
1. Addresses are A18:A0 in word mode (BYTE# = V ), A18:A-1 in byte mode (BYTE# = V ).  
IH  
IL  
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector  
Protection/Unprotection” section.  
The internal state machine is set for reading array  
Word/Byte Configuration  
data upon device power-up, or after a hardware reset.  
The BYTE# pin controls whether the device data I/O  
This ensures that no spurious alteration of the mem-  
pins operate in the byte or word configuration. If the  
ory content occurs during the power transition. No  
BYTE# pin is set at logic ‘1’, the device is in word con-  
command is necessary in this mode to obtain array  
figuration, DQ0-15 are active and controlled by CE#  
data. Standard microprocessor read cycles that as-  
and OE# .  
sert valid addresses on the device address inputs pro-  
If the BYTE# pin is set at logic ‘0’, the device is in byte  
configuration, and only data I/O pins DQ0–DQ7 are ac-  
tive and controlled by CE# and OE#. The data I/O pins  
DQ8–DQ14 are tri-stated, and the DQ15 pin is used as  
an input for the LSB (A-1) address function.  
duce valid data on the device data outputs. EAch bank  
remains enabled for read access until the command  
register contents are altered.  
See “Reading Array Data” for more information. Refer  
to the AC Read-Only Operations table for timing spec-  
ifications and to Figure 13 for the timing diagram. ICC1  
in the DC Characteristics table represents the active  
current specification for reading array data.  
Requirements for Reading Array Data  
To read array data from the outputs, the system must  
drive the CE# and OE# pins to VIL. CE# is the power  
control and selects the device. OE# is the output con-  
trol and gates array data to the output pins. WE# should  
remain at VIH. The BYTE# pin determines whether the  
device outputs array data in words or bytes.  
Writing Commands/Command Sequences  
To write a command or command sequence (which in-  
cludes programming data to the device and erasing  
8
Am29DL800B  
 
 
 
 
 
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