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AM28F256-120PC 参数 Datasheet PDF下载

AM28F256-120PC图片预览
型号: AM28F256-120PC
PDF下载: 下载PDF文件 查看货源
内容描述: 256千位(是32K ×8位)的CMOS 12.0伏,整体擦除闪存 [256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 35 页 / 467 K
品牌: AMD [ AMD ]
 浏览型号AM28F256-120PC的Datasheet PDF文件第19页浏览型号AM28F256-120PC的Datasheet PDF文件第20页浏览型号AM28F256-120PC的Datasheet PDF文件第21页浏览型号AM28F256-120PC的Datasheet PDF文件第22页浏览型号AM28F256-120PC的Datasheet PDF文件第24页浏览型号AM28F256-120PC的Datasheet PDF文件第25页浏览型号AM28F256-120PC的Datasheet PDF文件第26页浏览型号AM28F256-120PC的Datasheet PDF文件第27页  
DC CHARACTERISTICS over operating range unless otherwise specified  
TTL/NMOS Compatible  
Parameter  
Symbol  
Parameter Description  
Input Leakage Current  
Test Conditions  
= V Max, V = V or V  
SS  
Min  
Typ  
Max  
±1.0  
±1.0  
1.0  
Unit  
µA  
I
V
V
V
V
LI  
CC  
CC  
CC  
CC  
IN  
CC  
I
Output Leakage Current  
= V Max, V  
= V or V  
SS  
µA  
LO  
CC  
OUT  
CC  
I
V
V
Standby Current  
= V Max, CE# = V  
IH  
0.2  
20  
mA  
CCS  
CC  
CC  
CC  
V
Max, CE# = V OE# = V  
IL, IH  
CC = CC  
I
I
Active Read Current  
30  
30  
30  
mA  
mA  
CC1  
CC2  
I
= 0 mA, at 6 MHz  
OUT  
CE# = V  
IL  
V
Programming Current  
20  
20  
CC  
Programming in Progress (Note 4)  
CE# = V  
IL  
I
I
V
V
Erase Current  
mA  
µA  
CC3  
PPS  
CC  
PP  
Erasure in Progress (Note 4)  
Standby Current  
V
V
V
V
= V  
= V  
= V  
= V  
±1.0  
200  
PP  
PP  
PP  
PP  
PPL  
PPH  
PPL  
PPH  
70  
I
V
Read Current  
µA  
PP1  
PP  
±1.0  
I
V
V
Programming Current  
Erase Current  
10  
10  
30  
mA  
mA  
PP2  
PP  
PP  
Programming in Progress (Note 4)  
V
= V  
PP  
PPH  
I
30  
PP3  
Erasure in Progress (Note 4)  
V
Input Low Voltage  
–0.5  
2.0  
0.8  
V
V
IL  
V
Input High Voltage  
V
+ 0.5  
CC  
IH  
V
Output Low Voltage  
Output High Voltage  
A9 Auto Select Voltage  
A9 Auto Select Current  
I
I
= 5.8 mA, V = V Min  
0.45  
V
OL  
OL  
CC  
CC  
V
= –2.5 mA, V = V Min  
2.4  
V
OH1  
OH  
CC  
CC  
V
A9 = V  
11.5  
13.0  
50  
V
ID  
ID  
I
A9 = V Max, V = V Max  
CC  
5
µA  
ID  
ID  
CC  
V
during Read-Only  
Note: Erase/Program are inhibited  
when V = V  
PP  
V
0.0  
V
+2.0  
V
PPL  
CC  
Operations  
PP  
PPL  
V
during Read/Write  
PP  
V
11.4  
3.2  
12.6  
V
V
PPH  
Operations  
V
Low V Lock-out Voltage  
3.7  
LKO  
CC  
Notes:  
1. Caution: The Am28F256 must not be removed from (or inserted into) a socket when V or V is applied. If V 1.0 Volt,  
CC  
PP  
CC  
the voltage difference between V and V should not exceed 10.0 Volts. Also, the Am28F256 has a V rise time and fall  
PP  
CC  
PP  
time specification of 500 ns minimum.  
2.  
I
is tested with OE# = V to simulate open outputs.  
CC1 IH  
3. Maximum active power usage is the sum of I and I ..  
CC  
PP  
4. Not 100% tested.  
Am28F256  
23  
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