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PPC440SPE-AGB533C 参数 Datasheet PDF下载

PPC440SPE-AGB533C图片预览
型号: PPC440SPE-AGB533C
PDF下载: 下载PDF文件 查看货源
内容描述: 440SPe的PowerPC嵌入式处理器 [PowerPC 440SPe Embedded Processor]
分类和应用: PC
文件页数/大小: 80 页 / 1204 K
品牌: AMCC [ APPLIED MICRO CIRCUITS CORPORATION ]
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Revision 1.23 - Sept 21, 2006  
PowerPC 440SPe Embedded Processor  
Preliminary Data Sheet  
Table 6. Signal Functional Description (Sheet 3 of 8)  
Notes:  
1. Receiver input has hysteresis  
2. Must pull up (recommended value is 3kΩ to 3.3V)  
3. Must pull down (recommended value is 1kΩ)  
4. If not used, must pull up (recommended value is 3kΩ to 3.3V)  
5. If not used, must pull down (recommended value is 1kΩ)  
6. Strapping input during reset; pull-up or pull-down required  
Signal Name  
Description  
I/O  
Type  
Notes  
Request 64-bit transfer or ECC6.  
3.3V PCI or  
Normally used by the current bus master to indicate a  
64-bit transfer.  
PCIX0Req64/PCIX0ECC6  
I/O  
4
1.5V PCI for  
mode 2  
Used as ECC6 for PCIX0 mode 2.  
PCIX0Reset  
PCIX0SErr  
Sets PCI device registers and logic to a consistent state.  
O
3.3V PCI  
3.3V PCI  
Reports address parity errors, data parity errors on the  
Special Cycle command, or other catastrophic system  
errors.  
I/O  
4
Indicates the current target is requesting the master to  
stop the current transaction.  
PCIX0Stop  
I/O  
I/O  
3.3V PCI  
3.3V PCI  
4
4
Indicates the target agent’s ability to complete the  
current data phase of the transaction.  
PCIX0TRDY  
Voltage control output. Used to control the voltage  
regulator supplying the PCI I/O voltage. See PCIX0Cap  
signal.  
PCIX0VC  
O
I
3.3(1.5)V PCI  
VPCIXDDR  
0 = 3.3V (PCI I/O)  
1 =1.5V (PCI-X DDR)  
Voltage reference input for PCI-X mode 2/DDR (1.5V)  
I/O. Not used for PCI or PCI-X mode 1.  
PCIX0VRef0:1  
DDR SDRAM Interface  
BA0:2  
5
2.5(1.8)V  
DDR SDRAM  
Bank Address supporting up to 8 internal banks.  
Selects up to four external DDR SDRAM banks.  
Column Address Strobe.  
O
O
O
O
O
2.5(1.8)V  
DDR SDRAM  
BankSel0:3  
CAS  
2.5(1.8)V  
DDR SDRAM  
2.5(1.8)V  
DDR SDRAM  
ClkEn0:3  
DM0:8  
Clock Enable. One for each external bank.  
Memory write data byte lane masks. MEMDM8 is the  
byte lane mask for the ECC byte lane.  
2.5(1.8)V  
DDR SDRAM  
2.5(1.8)V  
DDR SDRAM  
DIFF  
DQS0:8  
DQS0:8  
Byte lane data strobe. DQS8 is the data strobe for the  
ECC byte lane. These signals are differential pairs.  
I/O  
2.5(1.8)V  
DDR SDRAM  
ECC0:7  
ECC check bits 0:7.  
I/O  
O
Memory address bus.  
2.5(1.8)V  
DDR SDRAM  
MemAddr14:00  
Note:MemAddr14 is the most significant bit (msb).  
Subsystem clocks. The Clock signal (differential pair) is  
duplicated six times to support high loading:  
2.5(1.8)V  
DDR SDRAM  
DIFF  
MemClkOut0:5  
MemClkOut0:5  
Six clocks can be used for two unbuffered DIMMS.  
O
Each individual clock signal can be enabled by  
programming the SDR0_DDRCLKSET register.  
Memory data bus.  
2.5(1.8)V  
DDR SDRAM  
MemData63:00  
52  
I/O  
Note:MemData63 is the most significant bit (msb).  
AMCC Proprietary  
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