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EPC2LC20 参数 Datasheet PDF下载

EPC2LC20图片预览
型号: EPC2LC20
PDF下载: 下载PDF文件 查看货源
内容描述: 配置设备以SRAM为基础的 [Configuration Devices for SRAM-Based]
分类和应用: 静态存储器
文件页数/大小: 26 页 / 386 K
品牌: ALTERA [ ALTERA CORPORATION ]
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Timing Information  
Page 17  
Table 9 lists the timing parameters when using EPC1 and EPC1441 devices at 3.3 V.  
Table 9. Timing Parameters when Using EPC1 and EPC1441 Devices at 3.3 V  
Symbol Parameter  
tPOR  
tOEZX  
tCE  
tDSU  
tDH  
Min  
30  
0
Typ  
4
Max  
200  
80  
Units  
ms  
ns  
(1)  
POR delay  
OE high to DATAoutput enabled  
OE high to first rising edge on DCLK  
Datasetup time before rising edge on DCLK  
Datahold time after rising edge on DCLK  
DCLKto DATAout  
300  
ns  
ns  
ns  
tCO  
2
30  
ns  
tCDOE  
fCLK  
tMCH  
tMCL  
tSCH  
tSCL  
tCASC  
tCCA  
tOEW  
tOEC  
tNRCAS  
DCLKto DATAenable/disable  
30  
ns  
DCLKfrequency  
10  
MHz  
ns  
DCLKhigh time for the first device in the configuration chain  
DCLKlow time for the first device in the configuration chain  
DCLKhigh time for subsequent devices  
DCLKlow time for subsequent devices  
DCLKrising edge to nCASC  
50  
50  
50  
50  
100  
125  
125  
250  
250  
ns  
ns  
ns  
25  
ns  
nCSto nCASCcascade delay  
15  
ns  
OE low pulse width (reset) to guarantee counter reset  
OE low (reset) to DCLKdisable delay  
OE low (reset) to nCASCdelay  
ns  
30  
ns  
30  
ns  
Note to Table 9:  
(1) During initial power-up, a POR delay occurs to permit voltage levels to stabilize. Subsequent reconfigurations do not incur this delay.  
Table 10 lists the timing parameters when using EPC1, EPC2, and EPC1441 devices at  
5.0 V.  
Table 10. Timing Parameters when Using EPC1, EPC2, and EPC1441 Devices at 5.0 V (Part 1 of 2)  
Symbol  
tPOR  
tOEZX  
tCE  
tDSU  
tDH  
Parameter  
Min  
30  
0
Typ  
10  
50  
50  
Max  
200  
50  
Units  
ms  
ns  
(1)  
POR delay  
OE high to DATAoutput enabled  
OE high to first rising edge on DCLK  
Datasetup time before rising edge on DCLK  
Datahold time after rising edge on DCLK  
DCLKto DATAout  
200  
ns  
ns  
ns  
tCO  
6.7  
30  
30  
30  
30  
20  
ns  
tCDOE  
fCLK  
tMCH  
tMCL  
tSCH  
tSCL  
tCASC  
tCCA  
DCLKto DATAenable/disable  
20  
ns  
DCLKfrequency  
16.7  
75  
MHz  
ns  
DCLKhigh time for the first device in the configuration chain  
DCLKlow time for the first device in the configuration chain  
DCLKhigh time for subsequent devices  
DCLKlow time for subsequent devices  
DCLKrising edge to nCASC  
75  
ns  
ns  
ns  
20  
ns  
nCSto nCASCcascade delay  
10  
ns  
January 2012 Altera Corporation  
Configuration Devices for SRAM-Based LUT Devices  
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