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EP1SGX40GF1020I6 参数 Datasheet PDF下载

EP1SGX40GF1020I6图片预览
型号: EP1SGX40GF1020I6
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 4697 CLBs, 41250-Cell, CMOS, PBGA1020, 33 X 33 MM, 1 MM PITCH, FBGA-1020]
分类和应用: 可编程逻辑
文件页数/大小: 272 页 / 1348 K
品牌: ALTERA [ ALTERA CORPORATION ]
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I/O Structure  
When using the IOE for DDR inputs, the two input registers clock double  
rate input data on alternating edges. An input latch is also used within the  
IOE for DDR input acquisition. The latch holds the data that is present  
during the clock high times. This allows both bits of data to be  
synchronous with the same clock edge (either rising or falling).  
Figure 4–64 shows an IOE configured for DDR input. Figure 4–65 shows  
the DDR input timing diagram.  
Figure 4–64. Stratix GX IOE in DDR Input I/O Configuration  
Note (1)  
VCCIO  
Column or Row  
Interconnect  
ioe_clk[7..0]  
(1)  
Optional  
To DQS Local  
Bus (3)  
PCI Clamp  
I/O Interconnect DQS Local  
[15..0] Bus (1), (2)  
(1)  
VCCIO  
Programmable  
Pull-Up  
Resistor  
Input Pin to  
Input Register Delay  
sclr  
Input Register  
D
Q
clkin  
ENA  
CLRN/PRN  
Output Clock  
Enable Delay  
Bus-Hold  
Circuit  
aclr/prn  
Chip-Wide Reset  
Latch  
D Q  
Input Register  
D
Q
ENA  
ENA  
CLRN/PRN  
CLRN/PRN  
Notes to Figure 4–64:  
(1) All input signals to the IOE can be inverted at the IOE.  
(2) This signal connection is only allowed on dedicated DQ function pins.  
(3) This signal is for dedicated DQS function pins only.  
4–104  
Altera Corporation  
February 2005  
Stratix GX Device Handbook, Volume 1  
 
 
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