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EP1AGX50DF780C6 参数 Datasheet PDF下载

EP1AGX50DF780C6图片预览
型号: EP1AGX50DF780C6
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 50160 CLBs, 640MHz, PBGA780, 29 X 29 MM, 1 MM PITCH, FBGA-780]
分类和应用: 现场可编程门阵列可编程逻辑LTE时钟
文件页数/大小: 296 页 / 3505 K
品牌: ALTERA [ ALTERA CORPORATION ]
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TriMatrix Memory  
M512 RAM blocks can have different clocks on its inputs and outputs.  
The wren, datain, and write address registers are all clocked together  
from one of the two clocks feeding the block. The read address, rden, and  
output registers can be clocked by either of the two clocks driving the  
block, allowing the RAM block to operate in read and write or input and  
output clock modes. Only the output register can be bypassed. The six  
labclksignals or local interconnect can drive the inclock, outclock,  
wren, rden, and outclrsignals. Because of the advanced interconnect  
between the LAB and M512 RAM blocks, ALMs can also control the wren  
and rdensignals and the RAM clock, clock enable, and asynchronous  
clear signals. Figure 2–42 shows the M512 RAM block control signal  
generation logic.  
Figure 2–42. M512 RAM Block Control Signals  
Dedicated  
6
Row LAB  
Clocks  
Local  
Interconnect  
Local  
Interconnect  
Local  
Interconnect  
Local  
Interconnect  
Local  
Interconnect  
Local  
Interconnect  
Local  
Interconnect  
outclocken  
inclocken  
wren  
Local  
Interconnect  
outclr  
inclock  
outclock  
rden  
The RAM blocks in Arria GX devices have local interconnects to allow  
ALMs and interconnects to drive into RAM blocks. The M512 RAM block  
local interconnect is driven by the R4, C4, and direct link interconnects  
from adjacent LABs. The M512 RAM blocks can communicate with LABs  
on either the left or right side through these row interconnects or with  
LAB columns on the left or right side with the column interconnects. The  
2–62  
Arria GX Device Handbook, Volume 1  
Altera Corporation  
May 2008  
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