AUGUST 2010
AS6C8016A
512K X 16 BIT LOW POWER CMOS SRAM
,
x
1
6
S
R
M
P
6 o w 8 e
r
1)
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Supply voltage
Symbol
Min
2.7
0
Typ
3.3
0
Max
Unit
V
V
3.6
0
CC
V
Ground
V
SS
2)
V
Input high voltage
-
-
V
V
V
+ 0.2
0.6
2.2
IH
CC
3)
V
Input low voltage
-0.2
IL
1. TA= -40 to 85oC, otherwise specified
2. Overshoot: VCC +2.0 V in case of pulse width < 20ns
3. Undershoot: -2.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested.
1)
o
CAPACITANCE (f =1MHz, T =25 C)
A
Item
Input capacitance
Symbol
Test Condition
V =0V
Min
Max
Unit
C
-
8
pF
IN
IO
IN
Input/Ouput capacitance
C
V =0V
-
10
pF
IO
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ILI
VIN=VSS to VCC
Input leakage current
-1
-1
-
-
-
-
1
1
2
μA
μA
CS=VIH or OE=VIH or WE=VIL or LB=UB=VIH
IO=VSS to VCC
ILO
ICC
Output leakage current
Operating power supply
V
IIO=0mA, CS=VIL, WE=VIH, VIN=VIH or VIL
mA
Cycle time=1μs, 100% duty, IIO=0mA,
ICC1
CS<0.2V, LB<0.2V or/and UB<0.2V,
VIN<0.2V or VIN>VCC-0.2V
-
-
-
-
4
mA
mA
Average operating
current
Cycle time =Min, IIO=0mA, 100% duty,
ICC2 CS=VIL, LB=VIL or/and UB=VIL ,
VIN=VIL or VIH
55ns
35
IOL = 2.1mA
Output low voltage
Output high voltage
Standby Current (TTL)
VOL
VOH
ISB
-
2.4
-
-
-
-
0.4
-
V
V
IOH = -1.0mA
CS=VIH, Other inputs=VIH or VIL
CS>VCC-0.2V, Other inputs = 0~VCC
0.5
mA
o
2 1)
ISB1
(Typ. condition : VCC=3.3V @ 25 C)
Standby Current (CMOS)
LF
-
15
μA
o
(Max. condition : VCC=3.6V @ 85 C)
1. Typical values are measured at Vcc=3.3V, TA=25oC and not 100% tested.
4
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
