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AS6C8016A-55BIN 参数 Datasheet PDF下载

AS6C8016A-55BIN图片预览
型号: AS6C8016A-55BIN
PDF下载: 下载PDF文件 查看货源
内容描述: [Process Technology]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 12 页 / 469 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
 浏览型号AS6C8016A-55BIN的Datasheet PDF文件第1页浏览型号AS6C8016A-55BIN的Datasheet PDF文件第2页浏览型号AS6C8016A-55BIN的Datasheet PDF文件第4页浏览型号AS6C8016A-55BIN的Datasheet PDF文件第5页浏览型号AS6C8016A-55BIN的Datasheet PDF文件第6页浏览型号AS6C8016A-55BIN的Datasheet PDF文件第7页浏览型号AS6C8016A-55BIN的Datasheet PDF文件第8页浏览型号AS6C8016A-55BIN的Datasheet PDF文件第9页  
AUGUST 2010  
AS6C8016A  
512K X 16 BIT LOW POWER CMOS SRAM  
,
L
o
w
       P
o
6 8  
         w
             e
                 r
V
1
6
B
 F
 a
 m
i
y
1)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
V , V  
Ratings  
-0.2 to 4.0  
-0.2 to 4.0  
1.0  
Unit  
V
Voltage on Any Pin Relative to Vss  
Voltage on Vcc supply relative to Vss  
Power Dissipation  
IN  
OUT  
V
V
CC  
P
W
D
o
Operating Temperature  
T
-40 to 85  
A
C
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Functional  
operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended  
periods may affect reliability.  
FUNCTIONAL DESCRIPTION  
CS  
H
X
L
OE  
X
X
H
H
L
WE  
X
LB  
X
H
L
UB  
X
H
X
L
DQ0~7  
High-Z  
High-Z  
High-Z  
High-Z  
Data Out  
High-Z  
Data Out  
Data In  
High-Z  
Data In  
DQ8~15  
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
Data Out  
Data Out  
High-Z  
Data In  
Data In  
Mode  
Power  
Stand by  
Stand by  
Active  
Deselected  
X
Deselected  
H
H
H
H
H
L
Output Disabled  
Output Disabled  
Lower Byte Read  
Upper Byte Read  
Word Read  
L
X
L
Active  
L
H
L
Active  
L
L
H
L
Active  
L
L
L
Active  
L
X
X
X
L
H
L
Lower Byte Write  
Upper Byte Write  
Word Write  
Active  
L
L
H
L
Active  
L
L
L
Active  
NOTE : X means don’t care. (Must be low or high state)  
3