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AS4LC8M8S0-10TC 参数 Datasheet PDF下载

AS4LC8M8S0-10TC图片预览
型号: AS4LC8M8S0-10TC
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3V 4Mx16和8Mx8 CMOS同步DRAM [3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 24 页 / 548 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
 浏览型号AS4LC8M8S0-10TC的Datasheet PDF文件第16页浏览型号AS4LC8M8S0-10TC的Datasheet PDF文件第17页浏览型号AS4LC8M8S0-10TC的Datasheet PDF文件第18页浏览型号AS4LC8M8S0-10TC的Datasheet PDF文件第19页浏览型号AS4LC8M8S0-10TC的Datasheet PDF文件第20页浏览型号AS4LC8M8S0-10TC的Datasheet PDF文件第21页浏览型号AS4LC8M8S0-10TC的Datasheet PDF文件第23页浏览型号AS4LC8M8S0-10TC的Datasheet PDF文件第24页  
AS4LC4M16S0  
AS4LC16M4S0  
®
Interleaved bank read waveform  
(BL = 8, CL = 3, Autoprecharge)  
CLK  
t
RC  
CS  
t
RC  
RAS  
t
t
t
RAS  
RAS  
RP  
tRAS  
t
RP  
CAS  
WE  
BA0/ BA1  
Bank  
RA  
Bank  
Bank  
Bank  
Bank  
Bank  
t
t
t
RCD  
RCD  
RCD  
A10  
RB  
RA  
c
a
b
A0A9, A11  
DQM  
RA  
RA  
CA  
RB  
CA  
b
CA  
c
c
a
a
b
CKE  
DQ  
QA  
a0  
QA QA  
QA QA  
a3 a4  
QA QA QA QB  
QB  
b1  
QB  
b4  
QB  
b5  
QB  
b6  
QA  
c0  
QA  
c0  
a1  
a2  
a5  
a6  
a7  
b0  
t
t
RRD  
RRD  
Active  
AP  
Read  
Bank A  
Bank B  
Active  
AP  
Read  
Read  
Active  
BA0 and BA1 together determine which bank undergoes operations. AP = internal precharge begins.  
Interleaved bank write waveform  
(BL = 8)  
CLK  
CS  
t
RC  
RAS  
t
t
RP  
RAS  
t
RAS  
CAS  
t
t
t
RCD  
RCD  
RCD  
WE  
Bank  
RA  
Bank  
Bank  
Bank  
Bank  
RA  
Bank  
BA0/ BA1  
A10  
RB  
b
a
c
RA  
RA  
CA  
RB  
b
CA  
CA  
c
c
a
a
b
A0-A9,A11  
DQM  
CKE  
DB  
b2  
DA  
a0  
DA  
a1  
DA  
a4  
DA  
a5  
DA DA  
a6 a7  
DB  
DB  
b1  
DB  
b3  
DB  
b4  
DB  
b5  
DB  
b6  
DB  
b7  
DA  
c0  
DA  
c1  
DA  
c2  
b0  
DQ  
Write  
Precharge  
Active  
Write  
Bank A Active  
Bank B  
Active  
Write  
Precharge  
BA0 and BA1 together determine which bank undergoes operations.  
22  
ALLIANCE SEMICONDUCTOR  
7/ 5/ 00  
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