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AS4C256M16D3-12BCN 参数 Datasheet PDF下载

AS4C256M16D3-12BCN图片预览
型号: AS4C256M16D3-12BCN
PDF下载: 下载PDF文件 查看货源
内容描述: [Bidirectional differential data strobe]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 83 页 / 2083 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C256M16D3  
Figure 46. WRITE(BC8) to WRITE(BC8)  
CK#  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
T11  
T12  
T13  
T14  
CK  
Notes 3  
WRITE  
NOP  
NOP  
NOP  
WRITE  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
COMMAND  
tCCD  
tWR  
4 Clocks  
tWTR  
Notes 4  
Bank  
Col n  
Bank  
Col b  
ADDRESS  
tWPST  
tWPRE  
DQS, DQS#  
Notes 2  
Din  
n
Din  
n+1  
Din  
n+2  
Din  
n+3  
Din  
n+4  
Din  
n+5  
Din  
n+6  
Din  
n+7  
Din  
b
Din  
b+1  
Din  
b+2  
Din  
b+3  
Din  
b+4  
Din  
b+5  
Din  
b+6  
Din  
b+7  
DQ  
WL = 5  
WL = 5  
NOTES:  
1. BL8, WL = 5 (CWL = 5, AL = 0)  
2. DIN n (or b) = data-in from column n (or column b).  
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.  
4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during WRITE command at T0 and T4.  
5. The write recovery time (tWR) and write timing parameter (tWTR) are referenced from the first rising clock edge after the last write data shown at T13.  
TRANSITIONING DATA  
Don't Care  
Figure 47. WRITE(BC4) to WRITE(BC4) OTF  
CK#  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
T11  
T12  
T13  
T14  
CK  
Notes 3  
WRITE  
NOP  
NOP  
NOP  
WRITE  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
4 Clocks  
NOP  
NOP  
NOP  
COMMAND  
tCCD  
tWR  
tWTR  
Notes 4  
Bank  
Col n  
Bank  
Col b  
ADDRESS  
tWPRE  
tWPST  
tWPST  
tWPRE  
DQS, DQS#  
Notes 2  
Din  
n
Din  
n+1  
Din  
n+2  
Din  
n+3  
Din  
b
Din  
b+1  
Din  
b+2  
Din  
b+3  
DQ  
WL = 5  
WL = 5  
NOTES:  
1. BC4, WL = 5 (CWL = 5, AL = 0)  
2. DIN n (or b) = data-in from column n (or column b).  
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.  
4. BC4 setting activated by MR0[A1:0 = 01] and A12 = 0 during WRITE command at T0 and T4.  
5. The write recovery time (tWR) and write timing parameter (tWTR) are referenced from the first rising clock edge at T13 (4 clocks from T9).  
TRANSITIONING DATA  
Don't Care  
Figure 48. WRITE(BC8) to READ(BC4,BC8) OTF  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
T11  
T12  
T13  
T14  
CK#  
CK  
Notes 3  
WRITE  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
READ  
NOP  
COMMAND  
tWTR  
Notes 4  
Bank  
Col n  
Bank  
Col b  
ADDRESS  
tWPST  
tWPRE  
DQS, DQS#  
Notes 2  
RL = 5  
Din  
n
Din  
n+1  
Din  
n+2  
Din  
n+3  
Din  
n+4  
Din  
n+5  
Din  
n+6  
Din  
n+7  
DQ  
WL = 5  
NOTES:  
1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0)  
2. DIN n = data-in from column n; DOUT b = data-out from column b.  
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.  
4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during WRITE command at T0.  
READ command at T13 can be either BC4 or BL8 depending on MR0[A1:0] and A12 status at T13.  
TRANSITIONING DATA  
Don't Care  
Confidential  
69  
Rev. 3.0  
Aug. /2014  
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