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AS4C256M16D3-12BCN 参数 Datasheet PDF下载

AS4C256M16D3-12BCN图片预览
型号: AS4C256M16D3-12BCN
PDF下载: 下载PDF文件 查看货源
内容描述: [Bidirectional differential data strobe]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 83 页 / 2083 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C256M16D3  
Figure 40. Write Timing Definition and parameters  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
CK#  
CK  
Notes 3  
WRITE  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
COMMAND  
WL = AL + CWL  
Notes 4  
Bank  
Col n  
ADDRESS  
tDSH  
tDSH  
tWPST(min)  
t
DQSS tDSH  
tDSH  
tWPRE(min)  
tDQSS(min)  
DQS, DQS#  
tDQSH(min)  
tDQSL  
tDSS  
tDQSH  
tDQSH  
tDQSL  
tDSS  
tDQSL  
tDSS  
tDQSL  
tDSS  
tDQSH tDQSL(min)  
tDSS  
tDQSH  
Notes 2  
Din  
n
Din  
n+2  
Din  
n+3  
Din  
n+4  
Din  
n+6  
Din  
n+7  
DQ  
DM  
tWPST(min)  
tDQSS(nominal)  
tDSH  
tDSH  
tDSH  
tDSH  
tWPRE(min)  
DQS, DQS#  
tDQSH(min)  
tDQSL  
tDSS  
tDQSL  
tDSS  
tDQSL  
tDSS  
tDQSL  
tDSS  
tDQSH  
tDQSH  
tDQSH  
tDQSH tDQSL(min)  
tDSS  
Notes 2  
Din  
n
Din  
n+2  
Din  
n+3  
Din  
n+4  
Din  
n+6  
Din  
n+7  
DQ  
DM  
tDQSS  
tDSH  
tWPST(min)  
tDSH  
tDSH  
tDSH  
tDQSS(max)  
tWPRE(min)  
DQS, DQS#  
tDQSH(min)  
tDQSL  
tDSS  
tDQSL tDQSH  
tDSS  
tDQSH tDQSL  
tDSS  
tDQSH tDQSL  
tDSS  
tDQSL(min)  
tDQSH  
tDSS  
Notes 2  
Din  
n
Din  
n+2  
Din  
n+3  
Din  
n+4  
Din  
n+6  
Din  
n+7  
DQ  
DM  
NOTES:  
1. BL8, WL = 5 (AL = 0, CWL = 5)  
2. DIN n = data-in from column n.  
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.  
4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during WRITE command at T0.  
5. tDQSS must be met at each rising clock edge.  
TRANSITIONING DATA  
Don't Care  
Confidential  
66  
Rev. 3.0  
Aug. /2014  
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