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AS4C256M16D3-12BCN 参数 Datasheet PDF下载

AS4C256M16D3-12BCN图片预览
型号: AS4C256M16D3-12BCN
PDF下载: 下载PDF文件 查看货源
内容描述: [Bidirectional differential data strobe]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 83 页 / 2083 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C256M16D3  
Figure 43. WRITE(BC4) to READ (BC4) operation  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
Tn  
CK#  
CK  
Notes 3  
WRITE  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
Notes 5  
READ  
COMMAND  
tWTR  
Notes 4  
Bank,  
Col n  
ADDRESS  
tWPST  
tWPRE  
DQS, DQS#  
Notes 2  
Din  
n
Din  
n+1  
Din  
n+2  
Din  
n+3  
DQ  
RL = 5  
WL = 5  
NOTES:  
1. BC4, WL = 5, RL = 5.  
2. DIN n = data-in from column n.  
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.  
4. BC4 setting activated by MR0[A1:0 = 10] during WRITE command at T0 and READ command at Tn.  
5. tWTR controls the write to read delay to the same device and starts with the first rising clock edge after the last write data shown at T7.  
TRANSITIONING DATA  
Don't Care  
TIME BREAK  
,
Figure 44. WRITE(BC4) to Precharge Operation  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
Tn  
CK#  
CK  
Notes 3  
WRITE  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
Notes 5  
PRE  
COMMAND  
tWR  
Notes 4  
Bank,  
Col n  
ADDRESS  
tWPST  
tWPRE  
DQS, DQS#  
Notes 2  
Din  
n
Din  
n+1  
Din  
n+2  
Din  
n+3  
DQ  
WL = 5  
NOTES:  
1. BC4, WL = 5, RL = 5.  
2. DIN n = data-in from column n.  
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.  
4. BC4 setting activated by MR0[A1:0 = 10] during WRITE command at T0.  
5. The write recovery time (tWR) referenced from the first rising clock edge after the last write data shown at T7.  
tWR specifies the last burst write cycle until the precharge command can be issued to the same bank .  
TRANSITIONING DATA  
Don't Care  
TIME BREAK  
Figure 45. WRITE(BC4) OTF to Precharge operation  
CK#  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
T11  
Ta0  
Ta1  
Ta2  
CK  
Notes 3  
WRITE  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
PRE  
NOP  
NOP  
COMMAND  
Notes 5  
4 Clocks  
tWR  
Notes 4  
Bank  
Col n  
ADDRESS  
VALID  
tWPST  
tWPRE  
DQS, DQS#  
Notes 2  
Din  
n
Din  
n+1  
Din  
n+2  
Din  
n+3  
DQ  
WL = 5  
NOTES:  
1. BC4 OTF, WL = 5 (CWL = 5, AL = 0)  
2. DIN n (or b) = data-in from column n.  
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.  
4. BC4 OTF setting activated by MR0[A1:0 = 01] and A12 = 0 during WRITE command at T0.  
5. The write recovery time (tWR) starts at the rising clock edge T9 (4 clocks from T5).  
TIME BREAK  
TRANSITIONING DATA  
Don't Care  
Confidential  
68  
Rev. 3.0  
Aug. /2014  
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