6
15
10
0.5
0.4
100
V
= 5.5 V
= 5.0 mA
T = 25°C
A
CC
V
V
I
= 5.5 V
CC
= 5.5 V
I
F
O
10
= 250 µA
I
F
F
+
V
–
I
= 12.8 mA
O
1.0
F
I
= 16 mA
= 6.4 mA
O
0.3
0.2
0.1
0.1
5
0
I
O
0.01
I
= 9.6 mA
O
0.001
-60 -40 -20
0
20 40 60 80 100
1.10 1.20
1.30 1.40
1.50
1.60
-60 -40 -20
0
20 40 60 80 100
T
– TEMPERATURE – °C
A
T
– TEMPERATURE – °C
V
– FORWARD VOLTAGE – VOLTS
A
F
Figure 1. High Level Output
Current vs. Temperature.
Figure 2. Low Level Output Voltage
vs. Temperature.
Figure 3. Input Diode Forward
Characteristic.
6
V
= 5 V
CC
= 25 °C
T
A
5
4
3
2
R
= 350 Ω
L
PULSE GEN.
R
= 1 KΩ
L
Z = 50 Ω
O
+5 V
t = t = 5 ns
f
r
R
= 4 KΩ
L
I
F
V
1
3
6
5
4
CC
1
0
R
L
0.1µF
BYPASS
OUTPUT V
O
MONITORING
NODE
0
1
2
3
4
6
5
*C
L
INPUT
MONITORING
NODE
I
– FORWARD INPUT CURRENT – mA
F
GND
R
M
Figure 4. Output Voltage vs.
Forward Input current.
*C IS APPROXIMATELY 15 pF WHICH INCLUDES
L
PROBE AND STRAY WIRING CAPACITANCE.
80
V
V
= 5.0 V
= 0.6 V
CC
OL
I
I
= 7.5 mA
F
F
INPUT
= 3.75 mA
I
60
40
F
I
I
= 10 mA, 15 mA
= 5.0 mA
F
F
t
t
PLH
PHL
OUTPUT
V
O
1.5 V
20
0
Figure 6. Test Circuit for tPHL and tPLH
.
-60 -40 -20
0
20 40 60 80 100
T
– TEMPERATURE – °C
A
Figure 5. Low Level Output Current
vs. Temperature.