Electrical Specifications
TA = 25°C unless otherwise specified.
Parameter
Symbol Device Min. Typ. Max. Units
Test Conditions Fig. Note
Transfer Gain
K3
HCNR200 0.85 1.00 1.15
HCNR201 0.95 1.00 1.05
HCNR201 0.93 1.00 1.07
5 nA < IPD < 50 µA, 2,3
0 V < VPD < 15 V
1
5 nA < IPD < 50 µA,
0 V < VPD < 15 V
1,2
1,2
-40°C < T < 85°C,
A
5 nA < IPD < 50 µA,
0 V < VPD < 15 V
Temperature
Coefficient of
Transfer Gain
∆K3/∆TA
-65
ppm/°C -40°C < T < 85°C,
2,3
A
5 nA < IPD < 50 µA,
0 V < VPD < 15 V
DC NonLinearity
(Best Fit)
NLBF
HCNR200
HCNR201
HCNR201
0.01 0.25
0.01 0.05
0.01 0.07
%
5 nA < IPD < 50 µA, 4,5,
3
0 V < VPD < 15 V
6
5 nA < IPD < 50 µA,
0 V < VPD < 15 V
2,3
2,3
-40°C < TA < 85°C,
5 nA < IPD < 50 µA,
0 V < VPD < 15 V
DC Nonlinearity
(Ends Fit)
NLEF
K1
0.016
5 nA < IPD < 50 µA,
0 V < VPD < 15 V
4
2
Input Photo-
diode Current
Transfer Ratio
(IPD1/IF)
HCNR200 0.25 0.50 0.75
HCNR201 0.36 0.48 0.72
%
IF = 10 mA,
0 V < VPD1 < 15 V
7
Temperature
Coefficient
of K1
∆K1/∆TA
-0.3
%/°C
-40°C < TA < 85°C,
IF = 10 mA
0 V < VPD1 < 15 V
7
8
Photodiode
Leakage Current
ILK
0.5
25
nA
V
IF = 0 mA,
0 V < VPD < 15 V
Photodiode
BVRPD
30
150
IR = 100 µA
Reverse Break-
down Voltage
Photodiode
Capacitance
CPD
VF
22
pF
V
VPD = 0 V
LED Forward
Voltage
1.3
1.2
1.6 1.85
1.6 1.95
IF = 10 mA
9,
10
IF = 10 mA,
-40°C < TA < 85°C
LED Reverse
Breakdown
Voltage
BVR
2.5
9
V
IF = 100 µA
Temperature
Coefficient of
Forward Voltage
∆V /∆TA
-1.7
80
mV/°C IF = 10 mA
F
LED Junction
Capacitance
CLED
pF
f = 1 MHz,
V = 0 V
F
1-423
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