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OR3T55-6BA256 参数 Datasheet PDF下载

OR3T55-6BA256图片预览
型号: OR3T55-6BA256
PDF下载: 下载PDF文件 查看货源
内容描述: 3C和3T现场可编程门阵列 [3C and 3T Field-Programmable Gate Arrays]
分类和应用: 现场可编程门阵列可编程逻辑
文件页数/大小: 210 页 / 4391 K
品牌: AGERE [ AGERE SYSTEMS ]
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Data Sheet  
June 1999  
ORCA Series 3C and 3T FPGAs  
Programmable Logic Cells (continued)  
Memory Mode  
The Series 3 PFU can be used to implement a 32 x 4 (128-bit) synchronous, dual-port random access memory  
(RAM). A block diagram of a PFU in memory mode is shown in Figure 9. This RAM can also be configured to work  
as a single-port memory and because initial values can be loaded into the RAM during configuration, it can also be  
used as a read-only memory (ROM).  
F5[A:D]  
READ  
4
ADDRESS[4:0]  
KZ[3:0]  
5
WRITE  
CIN(WA4)  
D
D
D
D
D
D
D
D
D
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
ADDRESS[4:0]  
DIN7(WA3)  
DIN5(WA2)  
DIN3(WA1)  
DIN1(WA0)  
DIN6(WD3)  
DIN4(WD2)  
DIN2(WD1)  
DIN0(WD0)  
F6  
F4  
F2  
F0  
D
D
D
D
Q
Q
Q
Q
Q6  
Q4  
Q2  
Q0  
4
READ  
DATA[3:0]  
4
WRITE  
DATA[3:0]  
WRITE  
ENABLE  
ASWE(WREN)  
CE(WPE1)  
D
EN  
RAM CLOCK  
S/R  
LSR(WPE2)  
CLK  
5-5969(F)  
Figure 9. Memory Mode  
The PFU memory mode uses all LUTs and latches/FFs including the ninth FF in its implementation as shown in  
Figure 9. The read address is input at the KZ[3:0] and F5[A:D] inputs where KZ[0] is the LSB and F5[A:D] is the  
MSB, and the write address is input on CIN (MSB) and DIN[7, 5, 3, 1], with DIN[1] being the LSB. Write data is  
input on DIN[6, 4, 2, 0], where DIN[6] is the MSB, and read data is available combinatorially on F[6, 4, 2, 0] and  
registered on Q[6, 4, 2, 0] with F[6] and Q[6] being the MSB. The write enable signal is input at ASWE, and two  
write port enables are input on CE and LSR. The PFU CLK signal is used to synchronously write the data. The  
polarities of the clock, write enable, and port enables are all programmable. Write-port enables may be disabled if  
they are not to be used.  
Lucent Technologies Inc.  
19