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ADG1419BRMZ 参数 Datasheet PDF下载

ADG1419BRMZ图片预览
型号: ADG1419BRMZ
PDF下载: 下载PDF文件 查看货源
内容描述: 2.1 Ω​​导通电阻, ±15 V / + 12 V / ± 5 V的iCMOS单刀双掷开关 [2.1 Ω On Resistance, ±15 V/+12 V/±5 V iCMOS SPDT Switch]
分类和应用: 开关光电二极管
文件页数/大小: 16 页 / 513 K
品牌: ADI [ ADI ]
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ADG1419  
−40°C to −40°C to  
Parameter  
25°C +85°C  
+125°C  
Unit  
Test Conditions/Comments  
VDD = +16.5 V, VSS = −16.5 V  
Digital inputs = 0 V or VDD  
POWER REQUIREMENTS  
IDD  
0.002  
58  
μA typ  
μA max  
μA typ  
μA max  
μA typ  
μA max  
μA typ  
μA max  
1.0  
95  
IDD, 8-Lead MSOP  
IDD, 8-Lead LFCSP  
ISS  
Digital inputs = 5 V  
120  
Digital inputs = 5 V  
190  
0.002  
Digital inputs = 0 V, 5 V or VDD  
1.0  
VDD/VSS  
±4.5/±16.5 V min/max Ground = 0 V  
1 Guaranteed by design, not subject to production test.  
+12 V SINGLE SUPPLY  
VDD = 12 V 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.  
Table 2.  
−40°C to −40°C to  
25°C +85°C  
+125°C  
Parameter  
Unit  
Test Conditions/Comments  
ANALOG SWITCH  
Analog Signal Range  
On Resistance, RON  
0 V to VDD  
6.2  
V
4
4.6  
Ω typ  
Ω max  
Ω typ  
Ω max  
Ω typ  
Ω max  
VS = 0 V to 10 V, IS = −10 mA; see Figure 22  
VDD = +10.8 V, VSS = 0 V  
VS = 0 V to 10 V, IS = −10 mA  
5.5  
On Resistance Match Between Channels, ∆RON 0.08  
0.25  
On Resistance Flatness, RFLAT (ON)  
0.3  
0.35  
1.2  
1.5  
VS = 0 V to 10 V, IS = −10 mA  
1.±5  
1.9  
LEAKAGE CURRENTS  
VDD = +13.2 V, VSS = 0 V  
Source Off Leakage, IS (Off)  
±0.1  
±0.5  
±0.2  
±0.6  
±0.2  
±1  
nA typ  
nA max  
nA typ  
nA max  
nA typ  
nA max  
VS = 1 V/10 V, VD = 10 V/1 V; see Figure 23  
±2  
±3  
±3  
±±5  
Drain Off Leakage, ID (Off)  
VS = 1 V/10 V, VD = 10 V/1 V; see Figure 23  
VS = VD = 1 V or 10 V; see Figure 24  
±100  
±100  
Channel On Leakage, ID, IS (On)  
DIGITAL INPUTS  
Input High Voltage, VINH  
Input Low Voltage, VINL  
Input Current, IINL or IINH  
2.0  
0.8  
V min  
V max  
μA typ  
μA max  
pF typ  
0.005  
4
VIN = VGND or VDD  
±0.1  
Digital Input Capacitance, CIN  
DYNAMIC CHARACTERISTICS1  
Transition Time, tTRANSITION  
200  
255  
145  
190  
130  
1±0  
55  
ns typ  
ns max  
ns typ  
ns max  
ns typ  
ns max  
ns typ  
ns min  
pC typ  
dB typ  
RL = 300 Ω, CL = 35 pF  
VS = 8 V; see Figure 25  
RL = 300 Ω, CL = 35 pF  
VS = 8 V; see Figure 2±  
RL = 300 Ω, CL = 35 pF  
VS = 8 V; see Figure 2±  
RL = 300 Ω, CL = 35 pF  
VS1 = VS2 = 8 V; see Figure 26  
VS = 6 V, RS = 0 Ω, CL = 1 nF; see Figure 28  
265  
220  
205  
3±0  
245  
220  
33  
tON (EN)  
tOFF (EN)  
Break-Before-Make Time Delay, tD  
Charge Injection  
Off Isolation  
13  
−60  
RL = 50 Ω, CL = 5 pF, f = 1 MHz;  
see Figure 29  
Rev. 0 | Page 4 of 16  
 
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