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ADF4360-3BCPZRL 参数 Datasheet PDF下载

ADF4360-3BCPZRL图片预览
型号: ADF4360-3BCPZRL
PDF下载: 下载PDF文件 查看货源
内容描述: 集成的合成器和VCO [Integrated Synthesizer and VCO]
分类和应用: 电信集成电路蜂窝电话电路电信电路信息通信管理
文件页数/大小: 24 页 / 317 K
品牌: ADI [ ADI ]
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ADF4360-3  
Data Sheet  
ABSOLUTE MAXIMUM RATINGS  
TA = 25°C, unless otherwise noted.  
Table 3.  
Parameter  
AVDD to GND1  
Rating  
Stresses above those listed under Absolute Maximum Ratings  
may cause permanent damage to the device. This is a stress  
rating only; functional operation of the device at these or any  
other conditions above those listed in the operational sections  
of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect  
device reliability.  
−0.3 V to +3.9 V  
−0.3 V to +0.3 V  
−0.3 V to +3.9 V  
−0.3 V to +0.3 V  
−0.3 V to VDD + 0.3 V  
−0.3 V to VDD + 0.3 V  
−0.3 V to VDD + 0.3 V  
AVDD to DVDD  
VVCO to GND  
VVCO to AVDD  
Digital I/O Voltage to GND  
Analog I/O Voltage to GND  
REFIN to GND  
Operating Temperature Range  
Maximum Junction Temperature  
CSP θJA Thermal Impedance  
(Paddle Soldered)  
(Paddle Not Soldered)  
Lead Temperature, Soldering  
Vapor Phase (60 sec)  
Infrared (15 sec)  
This device is a high performance RF integrated circuit with an  
ESD rating of <1 kV and it is ESD sensitive. Proper precautions  
should be taken for handling and assembly.  
150°C  
50°C/W  
88°C/W  
TRANSISTOR COUNT  
215°C  
220°C  
12543 (CMOS) and 700 (Bipolar).  
1 GND = AGND = DGND = 0 V.  
ESD CAUTION  
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the  
human body and test equipment and can discharge without detection. Although this product features  
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy  
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance  
degradation or loss of functionality.  
Rev. C | Page 6 of 24  
 
 
 
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