®
ACT8938
Rev 3, 23-Dec-11
TYPICAL PERFORMANCE CHARACTERISTICS CONT’D
(TA = 25°C, unless otherwise specified.)
VAC Applied
VAC Removed
CH4
CH4
CH3
CH2
CH3
CH2
CH1
CH1
VCHGIN = 5V
VBAT = 3.5V
RVSYS = 100ꢀ
ACIN/CHGLEV = 01
VCHGIN = 5V
VBAT = 3.5V
CH1: IBAT, 400mA/div
CH1: IBAT, 200mA/div
CH2: VVSYS, 2V/div
CH3: VBAT, 1V/div
CH4: VCHGIN, 5V/div
TIME: 40ms/div
CH2: VBAT, 1V/div
CH3: VVSYS, 2V/div
CH4: VCHGIN, 5V/div
TIME: 40ms/div
RVSYS = 100ꢀ
ACIN/CHGLEV = 01
VAC Applied
VAC Removed
CH4
CH4
CH3
CH2
CH3
CH2
CH1
CH1
VCHGIN = 5V
VBAT = 3.97V
VCHGIN = 5V
VBAT = 3.97V
CH1: IBAT, 1A/div
CH2: VBAT, 2V/div
CH3: VVSYS, 2V/div
CH4: VCHGIN, 5V/div
TIME: 40ms/div
CH1: IBAT, 1A/div
CH2: VVSYS, 2V/div
CH3: VBAT, 2V/div
CH4: VCHGIN, 5V/div
TIME: 40ms/div
RVSYS = 47ꢀ
RVSYS = 47ꢀ
ACIN/CHGLEV = 11
ACIN/CHGLEV = 11
Innovative PowerTM
Active-Semi Proprietary―For Authorized Recipients and Customers
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 27 -
www.active-semi.com
Copyright © 2011 Active-Semi, Inc.
ACTIVE-SEMI [ ACTIVE-SEMI, INC ]
