4.4.1 Continued.
e. Programmed device (see 3.2.3.2) - For device class M, subgroups 7, 8A, and 8B tests shall consist of verifying the
functionality of the device. For device classes Q and V, subgroups 7 and 8 shall include verifying the functionality of the
device. These tests shall have been fault graded in accordance with MIL-STD-883, test method 5012 (see 1.6 herein).
f. Unprogrammed devices shall be tested for programmability and dc and ac performance compliance to the requirements of
group A, subgroups 1 and 7.
(1) A sample shall be selected from each wafer lot to satisfy programmability requirements. Eight devices shall be
submitted to programming (see 3.2.3.1). If any device fails to program, the lot shall be rejected. At the manufacturer's
option, the sample may be increased to 18 total devices with no more than two total device failures allowable.
(2) These eight devices shall also be submitted to the requirements of the specified tests of group A, subgroups 1 and 7.
If any device fails, the lot shall be rejected. At the manufacturer's option, the sample may be increased to 18 total
devices with no more than two total device failures allowable.
(3a) Eight devices from the programmability sample shall be submitted to the requirements of group A, subgroups 9 for
binning circuit delay only. If any device fails, the lot shall be rejected. At the manufacturer's option, the sample may be
increased to 18 total devices with no more than two total device failures allowable.
(3b) If the binning circuit is tested on 100 percent of the products, then the above requirement is met.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a. Test condition D. The test circuit shall be maintained by the manufacturer under document revision level control and
shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs,
outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005.
b. T = +125°C, minimum.
A
c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB, in accordance with MIL-
PRF-38535, and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-
883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a. End-point electrical parameters shall be as specified in table IIA herein.
b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device
classes must meet the postirradiation end-point electrical parameter limits as defined in table IA at TA = +25°C ±5°C,
after exposure, to the subgroups specified in table IIA herein.
c. When specified in the purchase order or contract, a copy of the RHA delta limits shall be supplied.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019 condition A, see 1.5 herein.
4.4.4.1.1 Accelerated aging test. Accelerated aging tests shall be performed on all devices requiring a RHA level greater than
5k rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table IA herein and shall be the pre-
irradiation end-point electrical parameter limit at 25°C ± 5°C. Testing shall be performed at initial qualification and after any
design or process changes which may affect the RHA response of the device.
SIZE
STANDARD
5962-90965
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
G
SHEET
15
DSCC FORM 2234
APR 97
ACTEL [ Actel Corporation ]
