ADDR1600C4G11
DDR3L-1600(CL11) 240-Pin R-DIMM
4GB(512M x 72-bits)
Absolute Maximum Ratings：
Parameter
Symbol
VDD
Value
Unit
V
Voltage on VDD supply relative to Vss
Voltage on VDDQ pin relative to Vss
Voltage on any pin relative to Vss
Storage temperature
-0.4 ~ 1.975
-0.4 ~1.975
-0.4 ~ 1.975
-55 ~ +100
VDDQ
VIN, Vout
TStg
V
V
℃
Note: DDR3 SDRAM component specification.
Operation Temperature Condition
Parameter
Symbol
TC
Value
0~+85
Unit
℃
Note
Normal Operating Temperature Range
Extended Temperature Range (Optional)
1
1
℃
TC
+85~+95
Note: (1) If the DRAM case temperature is above 85 ℃, the Auto-Refresh command interval has to be reduced to tREFI=3.9us.
DC Operating Condition：
Voltage referenced to Vss = 0V, VDD&VDDQ=1.5V±0.075V, Tc = 0 to 85 ℃
Parameter
Symbol
VDD
Min
1.283
Max
1.45
Unit
V
Note
Supply Voltage
1,2
VDDSPD
VDDQ
3
3.6
V
Supply Voltage for Output
I/O Reference Voltage(CMD/ADD)
I/O Reference Voltage(DQ)
Termination Voltage
1.283
1.45
V
1,2
3,4
3,4
VREFCA, (DC)
VREFDQ, (DC)
VTT
0.49 x VDDQ
0.49 x VDDQ
0.49 x VDDQ-20mV
0.51 x VDDQ
0.51 x VDDQ
0.51 x VDDQ+20mV
V
V
V
Note: (1) Under all conditions VDDQ must be less than or equal to VDD.
(2) VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
(3) The AC peak noise on VREF may not allow VREF to deviate from VREF(DC) by more than ±1% VDD
(for reference: approx. ±15mV)
(4) For reference: approx. VDD/2 ±15mV
10
ADATA [ ADATA Technology Co., Ltd. ]
