ADDR1600C4G11
DDR3L-1600(CL11) 240-Pin R-DIMM
4GB(512M x 72-bits)
IDD Specification：
Symbol
Condition
Typical
1188
1368
216
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
IDD0
IDD1
Operating One Bank Active-Precharge Current
Operating One Bank Active-Read-Precharge Current
Precharge Power-Down Current Slow Exit
Precharge Power-Down Current Fast Exit
Precharge Quiet Standby Current
Precharge Standby Current
IDD2P0
IDD2P1
IDD2Q
IDD2N
IDD3P
IDD3N
IDD4W
IDD4R
IDD5B
IDD6
810
1206
1260
810
Active Power-Down Current
Active Standby Current
1206
2358
2358
2448
108
Operating Burst Write Current
Operating Burst Read Current
Burst Refresh Current
Self Refresh Current: Normal Temperature Range
Operating Bank Interleave Read Current
IDD7
5508
Note: IDD current measure method and detail patterns are described on DDR3 component datasheet. Only for reference.
Speed Bins and CL,tRCD,tRP,tRC and tRAS for Corresponding Bin：
Speed
DDR3-1600
Units
Bin(CL-tRCD-tRP)
11-11-11
min
Parameter
CL
11
tCK
ns
ns
ns
ns
ns
ns
ns
tRCD
tRC
13.125
48.125
6
tRRD
tCK
1.25
35
tRAS
tRP
13.125
160
tRFC
12
ADATA [ ADATA Technology Co., Ltd. ]
