V23990-P549-A01/ C01-PM
final datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr(V) or
VCE(V) or
IC(A) or
IF(A) or
ID(A)
VGE(V) or
T(C°)
Min
Max
V
GS(V)
VDS(V)
Transistor BRC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
2,2
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
VCE=VGE
0,0003
8
V
V
1,72
1,96
15
0
0,05
200
1200
0
mA
nA
Ohm
ns
20
-
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
130
20
Rise time
ns
td(off)
tf
Turn-off delay time
ns
Rgoff=64ꢃ
Rgon=64ꢃ
312
159
0,58
15
600
10
Fall time
ns
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
ꢀWs
ꢀWs
nF
Eoff
0,82
0,605
Cies
Coss
Crss
QGate
0,037
0,029
Output capacitance
f=1MHz
0
25
nF
Reverse transfer capacitance
Gate charge
nF
15
600
10
nC
85,46
2,09
Thermal grease
thicknessꢁ50um ꢂ = 0,61 W/mK
RthJH
Thermal resistance chip to heatsink per chip
K/W
Diode BRC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,75
1,72
2,35
250
VF
Ir
Diode forward voltage
Reverse leakage current
Reverse recovery time
Reverse recovered charge
Reverse recovery energy
4
V
ꢀA
1200
600
600
600
trr
Rgon=40ꢃ
Rgon=40ꢃ
15
15
15
5
5
5
ns
387
0,89
0,38
3,97
Qrr
Erec
ꢀC
ꢀWs
Rgon=40ꢃ
Thermal grease
thicknessꢁ50um ꢂ = 0,61 W/mK
RthJH
Thermal resistance chip to heatsink per chip
K/W
NTC Thermistor
Rated resistance
R25
DR/R
P
Tj=25°C
Tc=100°C
Tj=25°C
Tj=25°C
17,5
22
2,9
29
kOhm
%/K
mW
K
Deviation of R100
R100=1503ꢃ
Tol. 3%
Power dissipation given Epcos-Type
B-value
210
4000
B(25/100)
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