V23990-P549-A01/ C01-PM
final datasheet
Maximum Ratings
Condition
Parameter
Symbol
Value
Unit
Diode Inverter
Th=80°C
Tc=80°C
15
20
IF
IFRM
Ptot
Tj=Tjmax
DC forward current
A
A
tp limited by
Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum junction temperature
20
Th=80°C
Tc=80°C
29
44
Tj=Tjmax
W
°C
Tjmax
175
Transistor BRC
VCE
IC
Collector-emitter break down voltage
DC collector current
1200
V
A
Th=80°C
Tc=80°C
10
10
Tj=Tjmax
tp limited by
Tjmax
Icpuls
Ptot
VGE
Th=80°C
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
24
A
Th=80°C
Tc=80°C
33
51
Tj=Tjmax
W
V
20
Tjꢁ150°C
VCE=600
VGE=15V
tSC
SC withstand time*
10
ꢀs
Tjmax
Maximum junction temperature
175
°C
* It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits
Diode BRC
Th=80°C
Tc=80°C
6
6
IF
Tj=Tjmax
DC forward current
A
A
tp limited by
Tjmax
IFRM
Ptot
Th=80°C
Repetitive peak forward current
Power dissipation per Diode
Maximum junction temperature
6
Th=80°C
Tc=80°C
18
27
Tj=Tjmax
W
°C
Tjmax
175
Thermal properties
Storage temperature
Operation temperature
Tstg
Top
-40…+125
-40…+125
°C
°C
Insulation properties
Insulation voltage
Creepage distance
Clearance
Vis
t=1min
4000
Vdc
mm
mm
min 12,7
min 12,7
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copyright Tyco Electronics
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