V23990-P549-A01/ C01-PM
final datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr(V) or
VCE(V) or
IC(A) or
IF(A) or
ID(A)
VGE(V) or
T(C°)
Min
Max
V
GS(V)
VDS(V)
Input Rectifier Bridge
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
1,16
1,12
1,4
VF
Vto
rt
Forward voltage
30
30
30
V
V
0,91
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse leakage current
0,77
0,008
0,012
Ohm
mA
0,02
Ir
1500
Thermal grease
thicknessꢁ50um ꢂ = 0,61 W/mK
RthJH
Thermal resistance chip to heatsink per chip
1,69
K/W
Transistor Inverter
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
2,7
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
VCE=VGE
15
0,00025
10
V
V
1,81
0,25
200
0
1200
0
mA
nA
20
-
Ohm
ns
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
132
23
Rise time
ns
td(off)
tf
Turn-off delay time
ns
Rgoff=64 ꢃ
15
291
159
1,135
600
10
Rgon=64 ꢃ
Fall time
ns
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
mWs
nF
Eoff
1,009
0,6
Cies
Coss
Crss
QGate
0
25
25
0,037
0,029
Output capacitance
f=1MHz
0
0
nF
Reverse transfer capacitance
Gate charge
25
nF
600
10
15
nC
85,46
1,99
Thermal grease
thicknessꢁ50um ꢂ = 0,61 W/mK
RthJH
Thermal resistance chip to heatsink per chip
K/W
Diode Inverter
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,66
1,62
2,35
VF
IRM
trr
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery energy
10
10
10
10
10
V
A
15
15
15
15
600
600
600
600
11,6
504
ns
Qrr
ꢀC
mWs
2,3
Erec
0,927
2,41
Thermal grease
RthJH
Thermal resistance chip to heatsink per chip
K/W
thicknessꢁ50um ꢂ = 0,61 W/mK
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