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P4C1024L 参数 Datasheet PDF下载

P4C1024L图片预览
型号: P4C1024L
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗128K ×8 CMOS静态RAM [LOW POWER 128K x 8 CMOS STATIC RAM]
分类和应用:
文件页数/大小: 11 页 / 281 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P4C1024L  
TIMING WAVEFORM OF WRITE CYCLE NO.2 (CE CONTROLLED)(6)  
TRUTH TABLE  
AC TEST CONDITIONS  
Mode  
Standby  
Standby  
CE1 CE2 OE WE I/O  
Power  
Standby  
Standby  
Input Pulse Levels  
GND to 3.0V  
H
X
X
X
High Z  
High Z  
High Z  
X
L
X
X
Input Rise and Fall Times  
Input Timing Reference Level  
Output Timing Reference Level  
Output Load  
3ns  
1.5V  
1.5V  
L
H
H
H
Active  
DOUT Disabled  
See Fig. 1 and 2  
DOUT  
DIN  
L
L
H
H
L
H
L
Read  
Write  
Active  
Active  
X
Figure 2. Thevenin Equivalent  
Figure 1. Output Load  
* including scope and test fixture.  
Note:  
To avoid signal reflections, proper termination must be used; for  
example, a 50test environment should be terminated into a 50Ω  
load with 1.77V (Thevenin Voltage) at the comparator input, and a  
589resistor must be used in series with DOUT to match 639Ω  
(Thevenin Resistance).  
Because of the high speed of the P4C1024L, care must be taken  
when testing this device; an inadequate setup can cause a normal  
functioning part to be rejected as faulty. Long high-inductance  
leadsthatcausesupplybouncemustbeavoidedbybringingtheVCC  
and ground planes directly up to the contactor fingers. A 0.01 µF  
high frequency capacitor is also required between VCC and ground.  
Document # SRAM125 REV C  
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