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P4C1024L 参数 Datasheet PDF下载

P4C1024L图片预览
型号: P4C1024L
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗128K ×8 CMOS静态RAM [LOW POWER 128K x 8 CMOS STATIC RAM]
分类和应用:
文件页数/大小: 11 页 / 281 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P4C1024L  
AC CHARACTERISTICS - WRITE CYCLE  
(Over Recommended Operating Temperature & Supply Voltage)  
-55  
-70  
Symbol  
Parameter  
Unit  
Min  
Max  
Min  
Max  
55  
70  
ns  
ns  
tWC  
tCW  
tAW  
tAS  
tWP  
tAH  
Write Cycle Time  
Chip Enable Time  
to End of Write  
50  
50  
60  
60  
Address Valid to  
End of Write  
ns  
Address Set-up  
Time  
0
40  
0
0
50  
0
ns  
ns  
ns  
Write Pulse Width  
Address Hold  
Time  
Data Valid to End  
of Write  
tDW  
25  
0
30  
0
ns  
ns  
tDH  
tWZ  
Data Hold Time  
Write Enable to  
Output in High Z  
25  
30  
ns  
ns  
Output Active from  
End of Write  
tOW  
5
5
WRITE CYCLE NO. 1 (WE CONTROLLED)(6)  
Notes:  
6. CE1 and WE are LOW and CE2 is HIGH for WRITE cycle.  
7. OE is LOW for this WRITE cycle to show twz and tow.  
8. If CE1 goes HIGH or CE2 goes LOW simultaneously with WE HIGH, the output remains in a high impedance state.  
9. Write Cycle Time is measured from the last valid address to the first transitioning address.  
Document # SRAM125 REV C  
Page 5 of 10