P4C1024L
RECOMMENDED OPERATING TEMPERATURE & SUPPLY VOLTAGE
Temperature Range (Ambient)
Commercial (0°C to 70°C)
Supply Voltage
4.5V ≤ VCC ≤ 5.5V
4.5 ≤ VCC ≤ 5.5V
Industrial (-40°C to 85°C)
MAXIMUM RATINGS(1)
Stresses greater than those listed can cause permanent damage to the device. These are absolute stress ratings
only. Functional operation of the device is not implied at these or any other conditions in excess of those given in
the operational sections of this data sheet. Exposure to Maximum Ratings for extended periods can adversely
affect device reliability.
Symbol
VCC
Parameter
Supply Voltage with Respect to GND
Terminal Voltage with Respect to GND (up to 7.0V)
Operating Ambient Temperature
Storage Temperature
Min
-0.5
-0.5
Max
Unit
7.0
V
V
VTERM
TA
VCC + 0.5
-55
-65
125
150
25
°C
°C
STG
IOUT
ILAT
Output Current into Low Outputs
mA
Latch-up Current
>200
mA
DC ELECTRICAL CHARACTERISTICS
(Over Recommended Operating Temperature & Supply Voltage)(2)
Symbol
Test Conditions
Max
Unit
Parameter
Min
Output High Voltage
(I/O0 - I/O7)
VOH
IOH = –1mA, VCC = 4.5V
2.4
V
Output Low Voltage
(I/O0 - I/O7)
VOL
IOL = 2.1mA
0.4
V
Input High Voltage
Input Low Voltage
2.2
VCC + 0.3
0.8
V
V
VIH
VIL
-0.5
GND ≤ VIN ≤ VCC
GND ≤ VOUT ≤ VCC
Ind'l.
Com'l.
-5
-2
+5
+2
µA
Input Leakage Current
Output Leakage Current
ILI
Ind'l.
-5
-2
+5
+2
µA
ILO
CE1 ≥ VIH or CE2 ≤ VIL Com'l.
VCC Current
TTL Standby Current
(TTL Input Levels)
VCC = 5.5V, IOUT = 0 mA
ISB
3
mA
µA
CE1 = VIH or CE2 = VIL
VCC Current
CMOS Standby Current
(CMOS Input Levels)
VCC = 5.5V, IOUT = 0 mA
ISB1
100
CE1 ≥ VCC -0.2V, CE2 ≤ 0.2V
Document # SRAM125 REV C
Page 2 of 10
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
