PACE1750AE
DC ELECTRICAL SPECIFICATIONS (Over recommended operating conditions)
1
Symbol
Parameter
Min
Max
V + 0.5
CC
Unit
Conditions
V
V
V
Input HIGH Level Voltage
2.0
V
IH
IL
2
Input LOW Level Voltage
–0.5
0.8
V
Input Clamp Diode Voltage
–1.2
V
V
CC
V
CC
V
CC
V
CC
V
CC
= 4.5V, I = –18mA
IN
CD
2.4
V
= 4.5V
= 4.5V
= 4.5V
= 4.5V
I
I
I
I
= –8.0mA
= –300µA
= 8.0mA
= 300µA
OH
OH
OL
OL
V
V
Output HIGH Level Voltage
OH
OL
V
– 0.2
V
CC
0.5
0.2
V
Output LOW Level Voltage
Input HIGH Level Current,
V
I
I
I
I
except IB – IB ,
10
50
µA
µA
µA
µA
V
IN
V
IN
V
IN
V
IN
= V , V = 5.5V
CC CC
IH1
0
15
BUS BUSY, BUS LOCK
Input HIGH Level Current,
IB – IB ,
= V , V = 5.5V
CC CC
IH2
IL1
IL2
0
15
BUS BUSY, BUS LOCK
Input LOW Level Current,
except IB – IB ,
–10
–50
= GND, V = 5.5V
CC
0
15
BUS BUSY, BUS LOCK
Input LOW Level Current,
IB – IB ,
= GND, V = 5.5V
CC
0
15
BUS BUSY, BUS LOCK
Output Three-State Current
Output Three-State Current
I
I
50
µA
µA
V
V
V
= 2.4V, V = 5.5V
CC
OZH
OUT
–50
= 0.5V, V = 5.5V
CC
OZL
OUT
Quiescent Power Supply
Current (CMOS Input
Levels)
< 0.2V or < V – 0.2V,
CC
IN
I
20
50
mA
mA
f = 0MHz, Outputs Open,
CCQC
CCQT
V
CC
= 5.5V
Quiescent Power Supply
Current (TTL Input
Levels)
V
IN
< 3.4V, f = 0MHz,
I
Outputs Open,
V
CC
= 5.5V
Dynamic Power
Supply Current
20 MHz
70
85
mA
mA
mA
mA
pF
V
= 0V to V , tr = tf = 2.5 ns,
IN CC
I
I
30 MHz
Outputs Open,
CCD
40 MHz
100
V = 5.5V
CC
3
Output Short Circuit Current
–25
V = GND, V = 5.5V
OUT CC
OS
C
C
C
Input Capacitance
10
15
15
IN
Output Capacitance
pF
OUT
I/O
Bi-directional Capacitance
pF
Notes
1. 4.5V ≤ V ≤ 5.5V, –55°C ≤ T ≤ +125°C. Unless otherwise specified, testing shall be conducted at worst-case conditions.
CC
C
2. V = –3.0V for pulse widths less than or equal to 20ns.
IL
3. Duration of the short should not exceed one second; only one output may be shorted at a time.
Do c um e nt # MICRO-2 REV G
Pa g e 4 o f 25
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
