ESMT
M13S256328A
DC Specifications
Version
-5
Unit
-
Note
-
Parameter
Symbol
Test Condition
Operation Current
(One Bank Active)
tRC = tRC (min) tCK = tCK (min)
Active – Precharge
IDD0
IDD1
190
230
40
mA
mA
mA
mA
mA
-
-
-
-
-
Burst Length = 2 tRC = tRC (min),
CL= 2.5 IOUT = 0mA,
Active-Read- Precharge
Operation Current
(One Bank Active)
Precharge Power-down
Standby Current
CKE ≤ VIL(max), tCK = tCK (min),
All banks idle
IDD2P
IDD2N
IDD3P
CKE ≥ VIH(min), CS ≥
VIH(min), tCK = tCK (min)
Idle Standby Current
150
50
Active Power-down Standby
Current
All banks ACT, CKE ≤ VIL(max),
tCK = tCK (min)
One bank; Active-Precharge, tRC
Active Standby Current
IDD3N = tRAS(max),
CK = tCK (min)
180
mA
-
t
Burst Length = 2, CL= 2.5 , tCK
tCK (min), IOUT = 0Ma
=
=
Operation Current (Read)
Operation Current (Write)
IDD4R
IDD4W
495
450
mA
mA
-
-
Burst Length = 2, CL= 2.5 , tCK
tCK (min)
Auto Refresh Current
Self Refresh Current
IDD5
IDD6
350
8
mA
mA
-
tRC ≥ tRFC(min)
CKE ≤ 0.2V
1
Note 1. Enable on-chip refresh and address counters.
AC Operation Conditions & Timing Specification
AC Operation Conditions
Parameter
Symbol
Min
Max
Unit
Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals
VIH(AC)
VIL(AC)
VID(AC)
VREF + 0.35
-
V
V
V
-
-
-
VREF - 0.35
VDDQ+0.6
0.7
1
Input Different Voltage, CLK and CLK inputs
VIX(AC)
0.5*VDDQ-0.2 0.5*VDDQ+0.2
V
2
Input Crossing Point Voltage, CLK and CLK inputs
Note1. VID is the magnitude of the difference between the input level on CLK and the input on CLK .
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of
the same.
Input / Output Capacitance
(VDD = 2.3V~2.7V, VDDQ =2.3V~2.7V, TA = 25°C , f = 1MHz)
Parameter
Symbol
CIN1
Min
1
Max
4
Unit
pF
Input capacitance(A0~A11, BA0~BA1, CKE, CS , RAS , CAS , WE )
CIN2
1
5
pF
Input capacitance (CLK, CLK )
Data & DQS input/output capacitance
Input capacitance (DM)
COUT
CIN3
1
1
6.5
6.5
pF
pF
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2007
Revision : 1.2 5/47
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
