ESMT
M13S256328A
DC Operation Condition & Specifications
DC Operation Condition
Recommended operating conditions (Voltage reference to VSS = 0V, TA = 0 to 70°C )
Parameter
Symbol
VDD
Min
2.3
Max
2.7
Unit
V
Note
Supply voltage
I/O Supply voltage
I/O Reference voltage
VDDQ
VREF
2.3
2.7
V
0.49*VDDQ
VREF - 0.04
VREF + 0.15
-0.3
0.51*VDDQ
VREF + 0.04
VDDQ + 0.3
VREF - 0.15
5
V
1
2
I/O Termination voltage (system)
Input logic high voltage
Input logic low voltage
VTT
V
VIH (DC)
VIL (DC)
II
V
V
Input leakage current
μ A
3
-5
Output leakage current
IOZ
IOH
μ A
-5
5
Output High Current (Normal strength driver)
(VOUT =VDDQ-0.373V, min VREF, min VTT)
-16.8
mA
Output Low Current (Normal strength driver)
(VOUT = 0.373V)
IOL
IOH
IOL
+16.8
-9
mA
mA
mA
Output High Current (Weak strength driver)
(VOUT =VDDQ-0.763V, min VREF, min VTT)
Output Low Current (Weak strength driver)
(VOUT = 0.763V)
+9
Notes 1. VREF is expected to be equal to 0.5* VDDQ of the transmitting device, and to track variations in the DC level of the
same. Peak-to-peak noise on VREF may not exceed 2% of the DC value.
2. VTT is not applied directly to the device. VTT is system supply for signal termination resistors, is expected to be set
equal to VREF, and must track variations in the DC level of VREF
.
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2007
Revision : 1.2 4/47
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
