CEM11C2
P-Channel
5
1.15
1.6
ID=-250ijA
V
DS=VGS
=-250ijA
1.10
1.05
1.00
1.4
1.2
I
D
1.0
0.8
0.95
0.90
0.85
0.6
0.4
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
15
12
9
30.0
V
GS=0V
10.0
3
V
DS=-16V
1.0
0
0
4
8
12
16
0.4
0.6
0.8
1.0
1.2
1.4
-IDS, Drain-Source Current (A)
-VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
Figure 8. Body Diode Forward Voltage
Variation with Source Current
5-154