CEM11C2
P-Channel ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Typ C Max
Parameter
Condition
Min
Unit
Symbol
5
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
-20
V
BVDSS
VGS
VDS
VGS
=
=
0V, ID = -250µA
µA
nA
I
DSS
GSS
-16V, VGS
=
0V
0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
-1
=
8V, VDS
Ć
=
I
Ć100
ON CHARACTERISTICSb
VGS(th)
-0.6
V
Gate Threshold Voltage
-1.5
VDS
=
VGS, I
D
=
-250µA
mΩ
mΩ
50
80
V
V
V
V
GS
=
=
-4.5V,I
-2.5V,I
D
=
-2.2A
-1.8A
90
Drain-Source On-State Resistance
R
DS(ON)
GS
D
=
120
DS
DS
=
=
-5V, VGS
=
-4.5V
On-State Drain Current
I
D(ON)
A
S
-20
4
gFS
6
Forward Transconductance
-16V,ID =
-2.2A
DYNAMIC CHARACTERISTICSc
Input Capacitance
P
F
1430
800
C
ISS
V
DS =-15V, VGS = 0V
P
P
F
F
Output Capacitance
COSS
f =1.0MH
Z
Reverse Transfer Capacitance
CRSS
325
SWITCHING CHARACTERISTICSc
Turn-On Delay Time
t
D(ON)
28
30
ns
ns
20
21
V
DD = 10V,
= -2.2A,
I
V
D
t
r
Rise Time
GEN = - 4.5V,
Turn-Off Delay Time
Fall Time
t
D(OFF)
76
56
19.4
3
ns
ns
nC
106
78
R
GEN = 6
Ω
t
f
Q
g
25
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS =-6V, I = -2.2A,
D
Q
gs
gd
nC
nC
VGS =-4.5V
5
Q
5-150
CET [ CHINO-EXCEL TECHNOLOGY ]
