CEM11C2
N-Channel
1.15
1.10
1.09
1.06
5
5
ID=-250ijA
V
DS=VGS
=250ijA
I
D
1.05
1.00
1.03
1.00
0.97
0.95
0.90
0.85
0.94
0.91
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
30.0
15
V
DS=15V
12
9
10.0
6
3
0
1.0
0
5
10
15
20
0.4
0.6
0.8
1.0
1.2
1.4
IDS, Drain-Source Current (A)
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
Figure 8. Body Diode Forward Voltage
Variation with Source Current
5-152