CEM11C2
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
TypC Max
Parameter
Condition
Min
Unit
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS b
5
V
V
GS = 0V, Is = 2A
N-Ch
0.76
-0.80
1.1
-1.0
Diode Forward Voltage
V
V
SD
GS = 0V, Is =-1.8A P-Ch
Notes
ś
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300ijs, Duty Cycle 2%.
ś
ś
c.Guaranteed by design, not subject to production testing.
25
30
24
18
12
N-Channel
VGS=10,8,7,6,5V
20
15
VGS=4V
10
5
Tj=125 C
VGS=3V
-55 C
25 C
6
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
0.06
0.05
1800
VGS=10V
1500
1200
900
Tj=125 C
0.04
25 C
0.03
0.02
0.01
0
Ciss
-55 C
600
Coss
Crss
300
0
0
5
10
15
20
0
5
10
15
20
25
30
VDS, Drain-to Source Voltage (V)
ID, Drain Current(A)
Figure 3. Capacitance
Figure 4. On-Resistance Variation with
Drain Current and Temperature
5-151
CET [ CHINO-EXCEL TECHNOLOGY ]
