CEM11C2
N-Channel ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Typ C Max
Parameter
Condition
Min
Unit
Symbol
5
OFF CHARACTERISTICS
V
V
V
GS
=
0V,ID = 250µA
30
Drain-Source Breakdown Voltage
V
µA
nA
BVDSS
I
DSS
GSS
DS
GS
=
=
30V, VGS
=
0V
0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
1
20V, VDS
=
I
Ć
Ć100
ON CHARACTERISTICSb
V
GS(th)
1
3
V
Gate Threshold Voltage
V
DS
=
V
GS, I
D
=
=
250µA
24
32
V
V
V
V
GS
GS
DS
DS
=
=
=
=
10V, I
D
7A
30
42
mΩ
mΩ
Drain-Source On-State Resistance
RDS(ON)
4.5V, I
D
=
3.5A
10V
5V, VGS
=
On-State Drain Current
I
D(ON)
A
S
30
gFS
8
Forward Transconductance
15V, ID =7A
DYNAMIC CHARACTERISTICSc
Input Capacitance
P
F
804
328
79
C
ISS
V
DS =15V, VGS = 0V
P
P
F
F
Output Capacitance
COSS
f =1.0MH
Z
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICSc
Turn-On Delay Time
16
7
t
D(ON)
24
ns
ns
V
DD = 25V,
= 1A,
I
D
Rise Time
t
r
14
60
VGS = 10V,
47
10
20
3
Turn-Off Delay Time
Fall Time
t
D(OFF)
R
GEN = 6
ns
ns
nC
Ω
t
f
15
24
Q
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS =15V, I
D
= 2A,
Q
gs
gd
nC
nC
VGS =10V
6
Q
5-149
CET [ CHINO-EXCEL TECHNOLOGY ]
