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NCP1200/D 参数 Datasheet PDF下载

NCP1200/D图片预览
型号: NCP1200/D
PDF下载: 下载PDF文件 查看货源
内容描述: PWM电流模式控制器的低功耗通用离线用品\n [PWM Current-Mode Controller for Low-Power Universal Off-Line Supplies ]
分类和应用: 控制器
文件页数/大小: 16 页 / 136 K
品牌: ETC [ ETC ]
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NCP1200  
APPLICATIONS INFORMATION  
INTRODUCTION  
Dynamic Self–Supply  
The NCP1200 implements a standard current mode  
architecture where the switch–off time is dictated by the  
peak current setpoint. This component represents the ideal  
candidate where low part–count is the key parameter,  
particularly in low–cost AC/DC adapters, auxiliary supplies  
etc. Thanks to its high–performance High–Voltage  
technology, the NCP1200 incorporates all the necessary  
components normally needed in UC384X based supplies:  
timing components, feedback devices, low–pass filter and  
self–supply. This later point emphasizes the fact that ON  
Semiconductor’s NCP1200 does NOT need an auxiliary  
winding to operate: the product is naturally supplied from  
The DSS principle is based on the charge/discharge of the  
V
bulk capacitor from a low level up to a higher level. We  
CC  
can easily describe the current source operation with a bunch  
of simple logical equations:  
POWER–ON: IF V < V  
THEN Current Source  
CC  
CCOFF  
is ON, no output pulses  
IF V decreasing > V  
OFF, output is pulsing  
THEN Current Source is  
THEN Current Source is  
CC  
CCON  
IF V increasing < V  
CC  
CCOFF  
ON, output is pulsing  
Typical values are: V  
= 11.4 V, V  
= 9.8 V  
CCOFF  
CCON  
To better understand the operational principle, Figure 15’s  
sketch offers the necessary light:  
the high–voltage rail and delivers a V to the IC. This  
CC  
system is called the Dynamic Self–Supply (DSS).  
V
= 11.4 V  
CCOFF  
V
CC  
10.6 V Avg.  
V
CCON  
= 9.8 V  
ON  
OFF  
Current  
Source  
Output Pulses  
50.00M 70.00M  
10.00M  
30.00M  
90.00M  
Figure 15. The Charge/Discharge Cycle  
Over a 10 mF VCC Capacitor  
The DSS behavior actually depends on the internal IC  
consumption and the MOSFET’s gate charge, Qg. If we  
select a MOSFET like the MTD1N60E, Qg equals 11 nC  
(max). With a maximum switching frequency of 48 kHz (for  
the P40 version), the average power necessary to drive the  
MOSFET (excluding the driver efficiency and neglecting  
various voltage drops) is:  
. 0.16 = 256 mW. If for design reasons this contribution is  
still too high, several solutions exist to diminish it:  
1. Use a MOSFET with lower gate charge Qg  
2. Connect pin through a diode (1N4007 typically) to  
one of the mains input. The average value on pin 8  
2 * V  
mains PEAK  
becomes  
. Our power contribution  
p
example drops to: 160 mW.  
Fsw @ Qg @ V  
with  
cc  
Fsw = maximum switching frequency  
Qg = MOSFET’s gate charge  
Dstart  
1N4007  
V
CC  
= V level applied to the gate  
GS  
To obtain the final driver contribution to the IC  
C3  
4.7 mF  
400 V  
+
NCP1200  
consumption, simply divide this result by V : Idriver =  
CC  
HV  
NC  
1
2
3
4
8
7
6
5
Fsw @ Qg = 530 µA. The total standby power consumption  
at no–load will therefore heavily rely on the internal IC  
consumption plus the above driving current (altered by the  
driver’s efficiency). Suppose that the IC is supplied from a  
400 V DC line. To fully supply the integrated circuit, let’s  
imagine the 4 mA source is ON during 8 ms and OFF during  
50 ms. The IC power contribution is therefore: 400 V . 4 mA  
Adj  
FB  
CS  
V
CC  
EMI  
Filter  
Gnd Drv  
Figure 16. A simple diode naturally reduces the  
average voltage on pin 8  
http://onsemi.com  
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