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LH28F800BVE-TV85 参数 Datasheet PDF下载

LH28F800BVE-TV85图片预览
型号: LH28F800BVE-TV85
PDF下载: 下载PDF文件 查看货源
内容描述: X8 / X16闪存EEPROM [x8/x16 Flash EEPROM ]
分类和应用: 闪存内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 48 页 / 549 K
品牌: ETC [ ETC ]
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LHF80V25  
33  
sharp  
6.2.7 RESET OPERATIONS  
High Z  
RY/BY#(R)  
VOL  
VIH  
RP#(P)  
VIL  
tPLPH  
(A)Reset During Read Array Mode  
High Z  
RY/BY#(R)  
VOL  
tPLRZ  
VIH  
RP#(P)  
VIL  
tPLPH  
(B)Reset During Block Erase or Word/Byte Write  
5V  
VCC  
VIL  
t5VPH  
VIH  
RP#(P)  
VIL  
(C)RP# rising Timing  
Figure 15. AC Waveform for Reset Operation  
Reset AC Specifications  
V
=4.5V-5.5V  
Max.  
CC  
Sym.  
Parameter  
Notes  
Min.  
Unit  
ns  
RP# Pulse Low Time  
t
100  
PLPH  
(If RP# is tied to V , this specification is not applicable)  
CC  
t
t
RP# Low to Reset during Block Erase or Word/Byte Write  
1,2  
3
12  
µs  
ns  
PLRZ  
5VPH  
V
4.5V to RP# High  
100  
CC  
NOTES:  
1. If RP# is asserted while a block erase or word/byte write operation is not executing, the reset will complete within 100ns.  
2. A reset time, t , is required from the later of RY/BY# going High Z or RP# going high until outputs are valid.  
PHQV  
3. When the device power-up, holding RP# low minimum 100ns is required after V has been in predefined range and also  
CC  
has been in stable there.  
Rev. 1.1  
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