LHF80V25
29
sharp
(1)
6.2.5 AC CHARACTERISTICS - WRITE OPERATIONS
V
=4.5V-5.5V, T =0°C to +70°C
CC
A
Sym.
Parameter
Notes
Min.
85
1
Max.
Unit
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Write Cycle Time
AVAV
PHWL
ELWL
WLWH
PHHWH
SHWH
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHWL
WHRL
WHGL
QVVL
QVPH
RP# High Recovery to WE# Going Low
CE# Setup to WE# Going Low
WE# Pulse Width
2
10
40
100
100
100
40
40
0
RP# V Setup to WE# Going High
2
2
2
3
3
HH
WP# V Setup to WE# Going High
IH
V
Setup to WE# Going High
PP
Address Setup to WE# Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
5
10
30
WE# Pulse Width High
WE# High to RY/BY# Going Low
Write Recovery before Read
90
0
0
V
Hold from Valid SRD, RY/BY# High Z
2,4
2,4
2,4
5
PP
RP# V Hold from Valid SRD, RY/BY# High Z
0
HH
WP# V Hold from Valid SRD, RY/BY# High Z
0
QVSL
IH
BYTE# Setup to WE# Going High
BYTE# Hold from WE# High
40
85
FVWH
WHFV
5
NOTES:
1. Read timing characteristics during block erase and word/byte write operations are the same as during read-only operations.
Refer to AC Characteristics for read-only operations.
2. Sampled, not 100% tested.
3. Refer to Table 4 for valid A and D for block erase or word/byte write.
IN
IN
4. V should be held at V
(and if necessary RP# should be held at V ) until determination of block erase or
PP
PPH1/2
HH
word/byte write success (SR.1/3/4/5=0).
5. If BYTE# switch during reading cycle, exist the regulations separately.
Rev. 1.1
ETC [ ETC ]
