LHF80V25
34
sharp
(3)
6.2.8 BLOCK ERASE AND WORD/BYTE WRITE PERFORMANCE
V
=5V±0.5V, T =0°C to +70°C
A
CC
V
=4.5V-5.5V
V
=11.4V-12.6V
PP
(1)
PP
(1)
Sym.
Parameter
Notes
Typ.
Max.
Typ.
Max.
Unit
t
t
Word/Byte Write Time 32K word Block
4K word Block
2
2
12.2
18.3
0.4
8.4
17
µs
µs
s
WHQV1
EHQV1
Block Write Time
32K word Block
4K word Block
32K word Block
4K word Block
2,4
2,4
2
0.28
0.07
0.39
0.25
0.08
0.46
0.26
s
t
t
Block Erase Time
s
WHQV2
EHQV2
2
s
t
t
Word/Byte Write Suspend Latency Time
to Read
WHRZ1
EHRZ1
5
6
4
5
µs
µs
t
t
WHRZ2
EHRZ2
Erase Suspend Latency Time to Read
9.6
12
9.6
12
NOTES:
1. Typical values measured at T =+25°C and nominal voltages. Subject to change based on device characterization.
A
2. Excludes system-level overhead.
3. Sampled but not 100% tested.
4. All values are in word mode (BYTE#=V ). At byte mode (BYTE#=V ), those values are double.
IH
IL
Rev. 1.1
ETC [ ETC ]
