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LC5200D 参数 Datasheet PDF下载

LC5200D图片预览
型号: LC5200D
PDF下载: 下载PDF文件 查看货源
内容描述: SANKEN半导体 [SANKEN SEMICONDUCTORS]
分类和应用: 半导体
文件页数/大小: 226 页 / 4860 K
品牌: ETC [ ETC ]
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1-2-6 High Voltage 3-Phase Brushless Motor Driver ICs  
SCM1200M Series IGBT Output Element, Built-in Thermal Shutdown, Overcurrent Protection, and Shoot Through Prevention Circuits  
Features  
• Six IGBTs and six FRDs for the 3-phase bridge, a pre-drive IC, and a boot diode are integrated into a single package  
• Ideal for driving air conditioner compressors, washing machine drums, and refrigerator compressors  
• Built-in shoot through prevention (STP) circuit (when the ON signal is input simultaneously)  
• All IGBTs can be shut down when commonly connected to the FO pin.  
• Three built-in bootstrap diodes  
• Supports CMOS (3.3 and 5 V) input levels  
• Built-in undervoltage lock out (UVLO) circuit (auto regression)  
• Built-in overcurrent protection (OCP) circuit  
• Built-in thermal shut down (TSD) circuit (auto regression)  
• Fail signal output during operation of the UVLO (low side only), OCP, or STP circuit  
Absolute Maximum Ratings  
(T a=25℃)  
a
(T =25)  
Ratings  
Parameter  
Symbol  
S1221M  
(SCM1221MF)  
450  
SCM1223M  
SCM1224M  
(SCM1224MF)  
SCM1225MF  
SCM1226M  
(SCM1226MF)  
450  
SCM1230MF  
Unit  
Conditions  
Supply Voltage  
VDC  
450  
500  
600  
20  
20  
5
10  
450  
500  
600  
20  
20  
450  
500  
600  
20  
20  
15  
30  
450  
500  
600  
20  
20  
15  
30  
V
V
V
V
V
A
A
V
V
W
Between VBB and LS1 to LS3  
Between VBB and LS1 to LS3  
VCC=15V,IC=1mA,VIN=0V  
Between VCC and COM  
Between VB and HS (U, V, W)  
Supply Voltage (Surge)  
IGBT Output Breakdown Voltage  
Control Supply Voltage  
Control Supply Voltage (Bootstrap)  
Output Current (continuous)  
Output Current (pulse)  
Input Voltage  
FO Pin Voltage  
Collector Dissipation  
Thermal Resistance  
(Junction to Case)  
V
DC(Surge)  
VCES  
VCC  
VBS  
Io  
500  
600  
20  
20  
10  
20  
500  
600  
20  
20  
10  
20  
8
16  
Tc=25℃  
PW<1ms  
Iop  
VIN  
–0.5 to +7  
7
–0.5 to +7  
7
19.8  
6.3  
6.5  
–20 to +100  
150  
–40 to +150  
2000  
–0.5 to +7  
7
–0.5 to +7  
7
41.6  
3.0  
4.0  
–20 to +100  
150  
–40 to +150  
2000  
–0.5 to +7  
7
–0.5 to +7  
7
41.6  
3.0  
4.0  
–20 to +100  
150  
–40 to +150  
2000  
HIN,LIN,OCP  
VFO  
PD  
Between FO and COM  
TC=25, per IGBT element  
20.8(33.7)  
6.0(3.7)  
6.5(4.2)  
–20 to +100  
150  
20.1(32.8)  
6.2(3.8)  
6.5(4.2)  
–20 to +100  
150  
20.8(33.7)  
6.0(3.7)  
6.5(4.2)  
–20 to +100  
150  
R(j-c)Q  
R(j-c)F  
COP  
Tj  
/W Per IGBT element  
/W Per FWD element  
Operating Case Temperature  
Junction Temperature (Power part)  
Storage Temperature  
Tstg  
Viso  
–40 to +150  
2000  
–40 to +150  
2000  
–40 to +150  
2000  
°C  
Insulation Breakdown Voltage  
Vrms Between rear and lead pins, AC one minute  
Recommended Operating Conditions  
Ratings  
Parameter  
Symbol  
SCM1200M Series  
Unit  
Conditions  
min.  
typ.  
300  
max.  
400  
16.5  
Main Supply Voltage  
Control Supply Voltage  
VDC  
V
V
Between VBB and LS  
VCC,VBS  
tINmin(on)  
13.5  
0.5  
0.5  
1.0  
1
1
4.5  
10  
µs  
µs  
µs  
kΩ  
nF  
V
uF  
kHz  
ON pulse  
Minimum Input Pulse Width  
tINmin(off)  
tdead  
RFO  
CFO  
VFO  
CBOOT  
fc  
22  
10  
5.5  
220  
20  
OFF pulse  
Input Signal Dead Time  
FO Pull-up Resistance  
CFO Capacitor Capacity  
FO Pull-up Voltage  
Boot Capacitor  
PWM Carrier Frequency  
Junction Temperature  
For the SCM1221M (F) and SCM1225MF: 10  
Tj  
125  
ICs  
138  
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