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HY6264ALP-10 参数 Datasheet PDF下载

HY6264ALP-10图片预览
型号: HY6264ALP-10
PDF下载: 下载PDF文件 查看货源
内容描述: X8 SRAM\n [x8 SRAM ]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 9 页 / 143 K
品牌: ETC [ ETC ]
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HY6264A Series  
Note(READ CYCLE):  
1.tCHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions  
and are not referenced to output voltage levels.  
2.At any given temperature and voltage condition, tCHZ max. is less than tCLZ min. both for a given  
device and from device to device.  
3./WE is high for the read cycle.  
READ CYCLE 2(Note 1,2,3)  
tRC  
ADDR  
tAA  
tOH  
tOH  
Data  
Out  
Previous Data  
Data Valid  
Note(Read Cycle)  
1./WE is high for the read cycle.  
2.Device is continuously selected /CS=VIL, CS2=VIH.  
3./OE=VIL.  
WRITE CYCLE 1(/WE Controlled)  
tWC  
ADDR  
tAW  
tWR(2)  
tCW  
CS1  
CS2  
tWP  
tAS  
WE  
tDW  
tDH  
Data Valid  
Data In  
tOHZ  
tOW  
High-Z  
Data  
Out  
Data Undefined  
Rev.02 /Jan.99  
5
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