欢迎访问ic37.com |
会员登录 免费注册
发布采购

FW82443BX 参数 Datasheet PDF下载

FW82443BX图片预览
型号: FW82443BX
PDF下载: 下载PDF文件 查看货源
内容描述: 控制器杂项 - 数据表参考\n [Controller Miscellaneous - Datasheet Reference ]
分类和应用: 控制器
文件页数/大小: 132 页 / 642 K
品牌: ETC [ ETC ]
 浏览型号FW82443BX的Datasheet PDF文件第13页浏览型号FW82443BX的Datasheet PDF文件第14页浏览型号FW82443BX的Datasheet PDF文件第15页浏览型号FW82443BX的Datasheet PDF文件第16页浏览型号FW82443BX的Datasheet PDF文件第18页浏览型号FW82443BX的Datasheet PDF文件第19页浏览型号FW82443BX的Datasheet PDF文件第20页浏览型号FW82443BX的Datasheet PDF文件第21页  
Signal Description  
Table 2-2 lists the CPU bus interface signals which are NOT supported by the Intel® 440BX  
AGPset.  
Table 2-2. Host Signals Not supported by the 82443BX  
Signal  
Function  
Address  
Not Supported By 82443BX  
Extended addressing (over 4 GB)  
A[35:32]#  
AERR#  
AP[1:0]#  
BINIT#  
DEP[7:0]#  
IERR#  
Address Parity Error  
Address Parity  
Bus Initialization  
Data Bus ECC/Parity  
Internal Error  
Parity protection on address bus  
Parity protection on address bus  
Checking for bus protocol violation and protocol recovery mechanism  
Enhanced data bus integrity  
Direct internal error observation via IERR# pin  
Implemented by PIIX4E, BIST supported by external logic.  
Unrecoverable error without a bus protocol violation  
Parity protection on ADS# and PREQ[4:0]#  
INIT#  
Soft Reset  
BERR#  
RP#  
Bus Error  
Request Parity  
Response Parity  
Signal  
RSP#  
Parity protection on RS[2:0]#  
2.2  
DRAM Interface  
Table 2-3.  
Signals (Sheet 1 of 2)  
DRAM Interface  
Description  
Name  
Type  
Row Address Strobe (EDO): These signals are used to latch the row address on  
the MAxx lines into the DRAMs. Each signal is used to select one DRAM row.  
These signals drive the DRAM array directly without any external buffers.  
RASA[5:0]#  
/CSA[5:0]#  
O
Chip Select (SDRAM): For the memory row configured with SDRAM these pins  
perform the function of selecting the particular SDRAM components during the  
active state.  
CMOS  
RASB[5:0]#  
/CSB[5:0]#  
Note that there are 2 copies of RAS# per physical memory row to improve the  
loading.  
Clock Enable: In mobile mode, SDRAM Clock Enable is used to signal a self-  
refresh or power-down command to an SDRAM array when entering system  
suspend. CKE is also used to dynamically power down inactive SDRAM rows.  
This CKE function is not supported with Registered DIMMs.  
CKE[3:2]  
/CSA[7:6]#  
O
Chip Select (SDRAM): These pins perform the function of selecting the  
particular SDRAM components during the active state.  
CMOS  
CKE[5:4]  
/CSB[7:6]#  
Note that there are 2 copies of CS# per physical memory row to reduce the  
loading.  
Column Address Strobe A-side (EDO): The CASA[7:0]# signals are used to  
latch the column address on the MA[13:0] lines into the DRAMs of the A half of  
the memory array. These are active low signals that drive the DRAM array directly  
without external buffering.  
CASA[7:0]#  
/DQMA[7:0]  
O
CMOS  
Input/Output Data Mask A-side (SDRAM): These pins control A half of the  
memory array and act as synchronized output enables during read cycles and as  
a byte enables during write cycles.  
Column Address Strobe B-side (EDO) / Input/Output Data Mask B-side  
(SDRAM): The same function as a corresponding signals for A side. These  
signals are used to reduce the loading in an ECC configuration  
CASB[1,5]#  
/DQMB[1,5]  
O
CMOS  
82443BX Host Bridge Datasheet  
2-3  
 复制成功!